component
CPH6341-TL-W
Public Made by Adomby adom
onsemi MOSFETs, SOT-26-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCPH6341-TL-W
onsemi · MOSFETs · SOT-26-6
CPH6341-TL-W from onsemi, in a SOT-26-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings. |
| 3 | Gate | input | Gate terminal of the MOSFET, with a gate-to-source voltage rating of ±20 V per the absolute maximum ratings. |
| 4 | Source | passive | Source terminal of the P-channel MOSFET, the reference for the gate-to-source voltage rating. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-to-source voltage of --30 V and a DC drain current of --5 A per the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-26-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-to-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current (DC) | ID | -5 | A | 1 | |||
| Drain Current (Pulse) | IDP | -20 | A | PW≤10ms, duty cycle≤1% | 1 | ||
| Allowable Power Dissipation | PD | 1.6 | W | When mounted on ceramic substrate (900mm2×0.8mm) | 1 | ||
| Channel Temperature | Tch | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | V | ID=--1mA, VGS=0V | 2 | ||
| Zero-Gate Voltage Drain Current | IDSS | -1 | mA | VDS=--30V, VGS=0V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -10 | 10 | mA | VGS=±16V, VDS=0V | 2 | |
| Cutoff Voltage | VGS(off) | -1.2 | -2.6 | V | VDS=--10V, ID=--1mA | 2 | |
| Forward Transfer Admittance | /yfs/ | 2.8 | 4.8 | S | VDS=--10V, ID=--3A | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(on)1 | 45 | 59 | mW | ID=--3A, VGS=--10V | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(on)2 | 71 | 100 | mW | ID=--1.5A, VGS=--4.5V | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(on)3 | 82 | 115 | mW | ID=--1.5 A, VGS=--4V | 2 | |
| Diode Forward Voltage | VSD | -0.87 | -1.2 | V | IS=--5A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
CPH6341-TL-W - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26-6 (KiCad packages3D, STEP)
- 3D model files:
cph6341-tl-w-etched.step/cph6341-tl-w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cph6341-tl-w.step/cph6341-tl-w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
55e66386060b64ce, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).