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CNY17-2

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CNY17-2

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6

CNY17-2 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the gallium arsenide infrared emitting diode; the input diode has a reverse voltage limit of 6 V and a forward current limit of 60 mA.
2 C passive Cathode of the infrared emitting diode (input side), which is optically coupled to the phototransistor and isolated from the output at 5000 VRMS.
3 NC unconnected No connection; the datasheet pin diagram marks this pin NC.
4 E passive Emitter of the silicon NPN phototransistor output; the output emitter-base breakdown voltage is 7 V and the total power dissipation is 150 mW for the output section.
5 C passive Collector of the silicon NPN phototransistor output; collector-emitter breakdown voltage is 70 V and collector current is limited to 50 mA DC (100 mA for tp/T = 0.5, tp ≤ 10 ms).
6 B passive Base connection of the silicon NPN phototransistor, brought out to the package as stated in the datasheet title 'with Base Connection'; no separate base voltage or current limit is given.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 6 V 2
Forward current IF 60 mA 2
Forward surge current IFSM 2.5 A tp ≤ 10 μs 2
LED power dissipation at 25 °C Pdiss 100 mW at 25 °C 2
Collector emitter breakdown voltage BVCEO 70 V 2
Emitter base breakdown voltage BVEBO 7 V 2
Collector current IC 50 mA 2
Collector current (pulsed) IC 100 mA tp/T = 0.5, tp ≤ 10 ms 2
Power dissipation (output) Pdiss 150 mW 2
Total power dissipation Pdiss 250 mW 2
Isolation test voltage between emitter and detector VISO 5000 VRMS t = 1 min 2
Storage temperature Tstg -55 150 °C 2
Operating temperature Tamb -55 110 °C 2
Soldering temperature Tsld 260 °C 2 mm from case, ≤ 10 s 2
Forward voltage VF 1.39 1.65 V IF = 60 mA 2
Breakdown voltage VBR 6 V IR = 10 μA 2
Reverse current IR 0.01 10 μA VR = 6 V 2
Collector emitter, saturation voltage VCEsat 0.25 0.4 V VF = 10 mA, IC = 2.5 mA 3
Collector emitter, leakage current (CNY17-2) ICEO 2 50 nA VCE = 10 V 3
Current transfer ratio (CNY17-2) CTR 63 125 % VCE = 5 V, IF = 10 mA 3
Current transfer ratio (CNY17-2) CTR 22 45 % VCE = 5 V, IF = 1 mA 3
Capacitance CO 25 pF VR = 0 V, f = 1 MHz 2
Thermal resistance (input) Rth 750 K/W 2
Thermal resistance (output) Rth 500 K/W 3
Collector emitter capacitance CCE 5.2 pF VCE = 5 V, f = 1 MHz 3
Collector base capacitance CCB 6.5 pF VCE = 5 V, f = 1 MHz 3
Emitter base capacitance CEB 7.5 pF VCE = 5 V, f = 1 MHz 3
Coupling capacitance CC 0.6 pF 3
Turn-on time (linear operation) ton 3 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Rise time (linear operation) tr 2 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Turn-off time (linear operation) toff 2.3 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Fall time (linear operation) tf 2 μs IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Cut-off frequency fCO 110 kHz IF = 10 mA, VCC = 5 V, RL = 75 Ω 3
Turn-on time (saturated, CNY17-2) ton 4.2 μs IF = 10 mA 3
Rise time (saturated, CNY17-2) tr 3 μs IF = 10 mA 3
Turn-off time (saturated, CNY17-2) toff 23 μs IF = 10 mA 3
Fall time (saturated, CNY17-2) tf 14 μs IF = 10 mA 3
Maximum safety power PSO 700 mW 4
Input safety current ISI 400 mA 4
Safety temperature TSI 175 °C 4
Maximum transient isolation voltage VIOTM 8000 Vpeak 4
Maximum repetitive peak isolation voltage VIORM 890 Vpeak 4

CAD (KiCad official)

  • Symbol: CNY17-2
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: cny17-2-etched.step / cny17-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cny17-2.step / cny17-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 04d259c02d9124d0, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF