component
CNY17-2
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCNY17-2
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6
CNY17-2 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the gallium arsenide infrared emitting diode; the input diode has a reverse voltage limit of 6 V and a forward current limit of 60 mA. |
| 2 | C | passive | Cathode of the infrared emitting diode (input side), which is optically coupled to the phototransistor and isolated from the output at 5000 VRMS. |
| 3 | NC | unconnected | No connection; the datasheet pin diagram marks this pin NC. |
| 4 | E | passive | Emitter of the silicon NPN phototransistor output; the output emitter-base breakdown voltage is 7 V and the total power dissipation is 150 mW for the output section. |
| 5 | C | passive | Collector of the silicon NPN phototransistor output; collector-emitter breakdown voltage is 70 V and collector current is limited to 50 mA DC (100 mA for tp/T = 0.5, tp ≤ 10 ms). |
| 6 | B | passive | Base connection of the silicon NPN phototransistor, brought out to the package as stated in the datasheet title 'with Base Connection'; no separate base voltage or current limit is given. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | 6 | V | 2 | |||
| Forward current | IF | 60 | mA | 2 | |||
| Forward surge current | IFSM | 2.5 | A | tp ≤ 10 μs | 2 | ||
| LED power dissipation at 25 °C | Pdiss | 100 | mW | at 25 °C | 2 | ||
| Collector emitter breakdown voltage | BVCEO | 70 | V | 2 | |||
| Emitter base breakdown voltage | BVEBO | 7 | V | 2 | |||
| Collector current | IC | 50 | mA | 2 | |||
| Collector current (pulsed) | IC | 100 | mA | tp/T = 0.5, tp ≤ 10 ms | 2 | ||
| Power dissipation (output) | Pdiss | 150 | mW | 2 | |||
| Total power dissipation | Pdiss | 250 | mW | 2 | |||
| Isolation test voltage between emitter and detector | VISO | 5000 | VRMS | t = 1 min | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating temperature | Tamb | -55 | 110 | °C | 2 | ||
| Soldering temperature | Tsld | 260 | °C | 2 mm from case, ≤ 10 s | 2 | ||
| Forward voltage | VF | 1.39 | 1.65 | V | IF = 60 mA | 2 | |
| Breakdown voltage | VBR | 6 | V | IR = 10 μA | 2 | ||
| Reverse current | IR | 0.01 | 10 | μA | VR = 6 V | 2 | |
| Collector emitter, saturation voltage | VCEsat | 0.25 | 0.4 | V | VF = 10 mA, IC = 2.5 mA | 3 | |
| Collector emitter, leakage current (CNY17-2) | ICEO | 2 | 50 | nA | VCE = 10 V | 3 | |
| Current transfer ratio (CNY17-2) | CTR | 63 | 125 | % | VCE = 5 V, IF = 10 mA | 3 | |
| Current transfer ratio (CNY17-2) | CTR | 22 | 45 | % | VCE = 5 V, IF = 1 mA | 3 | |
| Capacitance | CO | 25 | pF | VR = 0 V, f = 1 MHz | 2 | ||
| Thermal resistance (input) | Rth | 750 | K/W | 2 | |||
| Thermal resistance (output) | Rth | 500 | K/W | 3 | |||
| Collector emitter capacitance | CCE | 5.2 | pF | VCE = 5 V, f = 1 MHz | 3 | ||
| Collector base capacitance | CCB | 6.5 | pF | VCE = 5 V, f = 1 MHz | 3 | ||
| Emitter base capacitance | CEB | 7.5 | pF | VCE = 5 V, f = 1 MHz | 3 | ||
| Coupling capacitance | CC | 0.6 | pF | 3 | |||
| Turn-on time (linear operation) | ton | 3 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Rise time (linear operation) | tr | 2 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Turn-off time (linear operation) | toff | 2.3 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Fall time (linear operation) | tf | 2 | μs | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Cut-off frequency | fCO | 110 | kHz | IF = 10 mA, VCC = 5 V, RL = 75 Ω | 3 | ||
| Turn-on time (saturated, CNY17-2) | ton | 4.2 | μs | IF = 10 mA | 3 | ||
| Rise time (saturated, CNY17-2) | tr | 3 | μs | IF = 10 mA | 3 | ||
| Turn-off time (saturated, CNY17-2) | toff | 23 | μs | IF = 10 mA | 3 | ||
| Fall time (saturated, CNY17-2) | tf | 14 | μs | IF = 10 mA | 3 | ||
| Maximum safety power | PSO | 700 | mW | 4 | |||
| Input safety current | ISI | 400 | mA | 4 | |||
| Safety temperature | TSI | 175 | °C | 4 | |||
| Maximum transient isolation voltage | VIOTM | 8000 | Vpeak | 4 | |||
| Maximum repetitive peak isolation voltage | VIORM | 890 | Vpeak | 4 |
CAD (KiCad official)
- Symbol:
CNY17-2 - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
cny17-2-etched.step/cny17-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cny17-2.step/cny17-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
04d259c02d9124d0, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).