component
CMU4N65
Public Made by Adomby adom
Cmos MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
CMU4N65
Cmos · MOSFETs · TO-251
CMU4N65 from Cmos, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V (VGSS) per the absolute maximum ratings. |
| 2 | D | passive | Drain; drain-source voltage is rated at 650 V (VDSS) with continuous drain current of 4 A at TC = 25°C (2.6 A at TC = 100°C). |
| 3 | S | passive | Source; maximum continuous drain-source diode forward current is 4 A (IS) and pulsed diode current is 12 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 2.6 | Ω | VGS = 10 V, ID = 2A | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 12 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1 | V | VGS = 0 V, IS = 1A | 2 | ||
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current - Continuous | ID | 2.6 | A | TC = 100°C | 1 | ||
| Drain Current - Pulsed | IDM | 12 | A | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Avalanche Current | IAR | 4 | A | 1 | |||
| Power Dissipation | PD | 60 | W | TC = 25°C | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -25 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | °C | 1/8 from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
CMU4N65 - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
cmu4n65-etched.step/cmu4n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmu4n65.step/cmu4n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
289c42c0b2fa95b4, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).