component
CMSA6683
Public Made by Adomby adom
Cmos MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMSA6683
Cmos · MOSFETs · DFN-8(5x6)
CMSA6683 from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C). |
| 2 | S | passive | Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C). |
| 3 | S | passive | Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C). |
| 4 | G | input | Gate terminal with gate-source voltage limit of ±12V and threshold of -0.5V to -1.5V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -54 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -37 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -162 | A | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 169 | mJ | TJ=25℃, VDD=15V, VGS=10V, L=0.5mH, IAS=26A | 1 | ||
| Total Power Dissipation | PD | 40 | W | TC=25℃ | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 55 | °C/W | Steady-State | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.7 | 10 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=-2.5V, ID=-5A | 2 | |
| Continuous Source Current | IS | -54 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -162 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IF=-20A | 2 | ||
| Forward Transconductance | gfs | 42 | S | VDS=-5V, ID=-10A | 2 | ||
| Gate Resistance | Rg | 10 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 80 | nC | VDD=-10V, VGS=-4.5V, ID=-12A | 2 | ||
| Gate-Source Charge | Qgs | 6.5 | nC | VDD=-10V, VGS=-4.5V, ID=-12A | 2 | ||
| Gate-Drain Charge | Qgd | 20 | nC | VDD=-10V, VGS=-4.5V, ID=-12A | 2 | ||
| Turn-On Delay Time | Td(on) | 16 | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 | ||
| Rise Time | Tr | 35 | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 312 | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 | ||
| Fall Time | Tf | 160 | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 | ||
| Input Capacitance | Ciss | 9000 | pF | VDS=-10V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 820 | pF | VDS=-10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 730 | pF | VDS=-10V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
CMSA6683 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa6683-etched.step/cmsa6683-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa6683.step/cmsa6683.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
248f313b7925e1a9, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMSA6683
**Cmos** · MOSFETs · DFN-8(5x6)
CMSA6683 from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C). |
| 2 | S | passive | Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C). |
| 3 | S | passive | Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C). |
| 4 | G | input | Gate terminal with gate-source voltage limit of ±12V and threshold of -0.5V to -1.5V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | -54 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | -37 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | -162 | A | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 169 | mJ | TJ=25℃, VDD=15V, VGS=10V, L=0.5mH, IAS=26A | 1 |
| Total Power Dissipation | PD | | | 40 | W | TC=25℃ | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 55 | °C/W | Steady-State | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 3 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250uA | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | | -1.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-16V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8.7 | 10 | mΩ | VGS=-4.5V, ID=-10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 11 | 15 | mΩ | VGS=-2.5V, ID=-5A | 2 |
| Continuous Source Current | IS | | | -54 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -162 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IF=-20A | 2 |
| Forward Transconductance | gfs | | 42 | | S | VDS=-5V, ID=-10A | 2 |
| Gate Resistance | Rg | | 10 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 80 | | nC | VDD=-10V, VGS=-4.5V, ID=-12A | 2 |
| Gate-Source Charge | Qgs | | 6.5 | | nC | VDD=-10V, VGS=-4.5V, ID=-12A | 2 |
| Gate-Drain Charge | Qgd | | 20 | | nC | VDD=-10V, VGS=-4.5V, ID=-12A | 2 |
| Turn-On Delay Time | Td(on) | | 16 | | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 |
| Rise Time | Tr | | 35 | | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 312 | | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 |
| Fall Time | Tf | | 160 | | ns | VDD=-10V, VGS=-4.5V, RGEN=6Ω | 2 |
| Input Capacitance | Ciss | | 9000 | | pF | VDS=-10V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 820 | | pF | VDS=-10V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 730 | | pF | VDS=-10V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `CMSA6683`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa6683-etched.step` / `cmsa6683-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa6683.step` / `cmsa6683.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos datasheet](docs/cmsa6683-datasheet.pdf) (2 pp, sha256 `248f313b7925e1a9`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmsa6683-datasheet.pdf)