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CMSA6683

Cmos · MOSFETs · DFN-8(5x6)

CMSA6683 from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C).
2 S passive Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C).
3 S passive Source terminal of the P-channel MOSFET (VDS -20V, ID -54A at TC=25°C).
4 G input Gate terminal with gate-source voltage limit of ±12V and threshold of -0.5V to -1.5V.
5 D passive Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A).
6 D passive Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A).
7 D passive Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A).
8 D passive Drain terminal of the P-channel MOSFET (VDS -20V, pulsed ID -162A).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -54 A TC=25℃ 1
Continuous Drain Current ID -37 A TC=100℃ 1
Pulsed Drain Current IDM -162 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Single Pulse Avalanche Energy EAS 169 mJ TJ=25℃, VDD=15V, VGS=10V, L=0.5mH, IAS=26A 1
Total Power Dissipation PD 40 W TC=25℃ 1
Junction-to-Ambient Thermal Resistance RθJA 55 °C/W Steady-State 1
Junction-to-Case Thermal Resistance RθJC 3 °C/W 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 2
Gate Threshold Voltage VGS(th) -0.5 -1.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-16V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 8.7 10 mΩ VGS=-4.5V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 11 15 mΩ VGS=-2.5V, ID=-5A 2
Continuous Source Current IS -54 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -162 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IF=-20A 2
Forward Transconductance gfs 42 S VDS=-5V, ID=-10A 2
Gate Resistance Rg 10 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 80 nC VDD=-10V, VGS=-4.5V, ID=-12A 2
Gate-Source Charge Qgs 6.5 nC VDD=-10V, VGS=-4.5V, ID=-12A 2
Gate-Drain Charge Qgd 20 nC VDD=-10V, VGS=-4.5V, ID=-12A 2
Turn-On Delay Time Td(on) 16 ns VDD=-10V, VGS=-4.5V, RGEN=6Ω 2
Rise Time Tr 35 ns VDD=-10V, VGS=-4.5V, RGEN=6Ω 2
Turn-Off Delay Time Td(off) 312 ns VDD=-10V, VGS=-4.5V, RGEN=6Ω 2
Fall Time Tf 160 ns VDD=-10V, VGS=-4.5V, RGEN=6Ω 2
Input Capacitance Ciss 9000 pF VDS=-10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 820 pF VDS=-10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 730 pF VDS=-10V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMSA6683
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa6683-etched.step / cmsa6683-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa6683.step / cmsa6683.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 248f313b7925e1a9, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF