component

CMSA50N06N

Public Made by Adom

by adom

Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenticcmsa50n06nfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers cmsa50n06n: viewers · Ray 3h ago
cmsa50n06n-etched.glb Publish 0.1.0 · Ray 3h ago
cmsa50n06n-etched.step cmsa50n06n: factory component page (tier=lcsc) · Ray 3h ago
cmsa50n06n-hero.glb cmsa50n06n: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
cmsa50n06n-hero.overlay.json Publish 0.1.0 · Ray 3h ago
cmsa50n06n.glb Publish 0.1.0 · Ray 3h ago
cmsa50n06n.kicad_mod Publish 0.1.0 · Ray 3h ago
cmsa50n06n.kicad_sym Publish 0.1.0 · Ray 3h ago
cmsa50n06n.lbr Publish 0.1.0 · Ray 3h ago
cmsa50n06n.step Publish 0.1.0 · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago

CMSA50N06N

Cmos(广东场效应半导体) · IC · DFN-8(5x6)

CMSA50N06N from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN-8 5x6 package; the datasheet gives no separate electrical limit for this pin beyond the absolute maximum ratings (VDS 60 V, IS 50 A continuous).
2 S passive Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN-8 5x6 package; the datasheet gives no separate electrical limit for this pin beyond the absolute maximum ratings (VDS 60 V, IS 50 A continuous).
3 S passive Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN-8 5x6 package; the datasheet gives no separate electrical limit for this pin beyond the absolute maximum ratings (VDS 60 V, IS 50 A continuous).
4 G input Gate terminal of the MOSFET, with a gate-source voltage limit of ±20 V and a typical gate resistance Rg of 2.1 Ω stated in the datasheet.
5 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN-8 5x6 package, rated for 60 V drain-source voltage and 50 A continuous drain current at TC=25℃.
6 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN-8 5x6 package, rated for 60 V drain-source voltage and 50 A continuous drain current at TC=25℃.
7 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN-8 5x6 package, rated for 60 V drain-source voltage and 50 A continuous drain current at TC=25℃.
8 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN-8 5x6 package, rated for 60 V drain-source voltage and 50 A continuous drain current at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC=25℃ 1
Continuous Drain Current ID 35 A TC=100℃ 1
Pulsed Drain Current IDM 150 A 1
Single Pulse Avalanche Energy EAS 144 mJ VDD=30V, VGS=10V, L=1mH, IAS=17A (note 1) 1
Total Power Dissipation PD 70 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W 1
Thermal Resistance Junction-Case RθJC 1.79 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=60V, VGS=0V, TJ=100℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 12 14 mΩ VGS=10V, ID=25A 2
Static Drain-Source On-Resistance RDS(ON) 13 16 mΩ VGS=4.5V, ID=20A 2
Continuous Source Current IS 50 A 2
Pulsed Source Current ISM 200 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.84 1.25 V VGS=0V, IS=20A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: CMSA50N06N
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa50n06n-etched.step / cmsa50n06n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa50n06n.step / cmsa50n06n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 40610ef28e4ab2fd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF