component
CMSA055N04
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMSA055N04
Cmos(广东场效应半导体) · MOSFETs · DFN-8(5x6)
CMSA055N04 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet marks pin 1 on the package outline but gives no explicit pin-to-function limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃). |
| 4 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.8 | 5.5 | mΩ | VGS=10V, ID=28A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.3 | mΩ | VGS=4.5V, ID=25A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=32V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode continuous forward current | IS | 80 | A | 2 | |||
| Diode pulse current | IS,pulse | 320 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.88 | 1.2 | V | VGS=0V, Is=28A, Tj=25℃ | 2 | |
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 80 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 56 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 81 | mJ | Note 1: VDS=25V, VGS=10V, L=0.5mH, IAS=18A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 45 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 25 | ℃/W | Surface mounted on a 1 inch² FR-4 board with 2OZ copper (Note 2) | 1 | ||
| Thermal Resistance Junction-to-Case | RθJC | 2.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMSA055N04 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa055n04-etched.step/cmsa055n04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa055n04.step/cmsa055n04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
3b73c803a5c3df2b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMSA055N04
**Cmos(广东场效应半导体)** · MOSFETs · DFN-8(5x6)
CMSA055N04 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet marks pin 1 on the package outline but gives no explicit pin-to-function limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃). |
| 4 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 4.8 | 5.5 | mΩ | VGS=10V, ID=28A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 8.3 | mΩ | VGS=4.5V, ID=25A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | μA | VDS=32V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Diode continuous forward current | IS | | | 80 | A | | 2 |
| Diode pulse current | IS,pulse | | | 320 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.88 | 1.2 | V | VGS=0V, Is=28A, Tj=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 80 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=70℃ | | | 56 | A | TC=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 320 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 81 | mJ | Note 1: VDS=25V, VGS=10V, L=0.5mH, IAS=18A | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 45 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 25 | ℃/W | Surface mounted on a 1 inch² FR-4 board with 2OZ copper (Note 2) | 1 |
| Thermal Resistance Junction-to-Case | RθJC | | | 2.8 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `CMSA055N04`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa055n04-etched.step` / `cmsa055n04-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa055n04.step` / `cmsa055n04.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905473141469184) (3 pp, sha256 `3b73c803a5c3df2b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmsa055n04-datasheet.pdf)