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CMSA055N04

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Cmos(广东场效应半导体) MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA055N04

Cmos(广东场效应半导体) · MOSFETs · DFN-8(5x6)

CMSA055N04 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet marks pin 1 on the package outline but gives no explicit pin-to-function limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃).
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃).
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this terminal beyond the absolute maximum ratings (VGS ±20 V, ID 80 A continuous at TC=25℃).
4 G input Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings.
5 D passive Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃).
6 D passive Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃).
7 D passive Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃).
8 D passive Drain terminal of the MOSFET; drain-source voltage is rated at 40 V (VDS) and continuous drain current at 80 A (TC=25℃).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 4.8 5.5 mΩ VGS=10V, ID=28A 2
Static Drain-Source On-Resistance RDS(ON) 8.3 mΩ VGS=4.5V, ID=25A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 μA VDS=32V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode continuous forward current IS 80 A 2
Diode pulse current IS,pulse 320 A 2
Diode Forward Voltage VSD 0.88 1.2 V VGS=0V, Is=28A, Tj=25℃ 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A TC=25℃ 1
Continuous Drain Current ID@TC=70℃ 56 A TC=70℃ 1
Pulsed Drain Current IDM 320 A 1
Single Pulse Avalanche Energy EAS 81 mJ Note 1: VDS=25V, VGS=10V, L=0.5mH, IAS=18A 1
Total Power Dissipation PD@TC=25℃ 45 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 25 ℃/W Surface mounted on a 1 inch² FR-4 board with 2OZ copper (Note 2) 1
Thermal Resistance Junction-to-Case RθJC 2.8 ℃/W 1

CAD (KiCad official)

  • Symbol: CMSA055N04
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa055n04-etched.step / cmsa055n04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa055n04.step / cmsa055n04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 3b73c803a5c3df2b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF