component
CMSA018DN10
Public Made by Adomby adom
Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMSA018DN10
Cmos(广东场效应半导体) · IC · DFN-8(5x6)
CMSA018DN10 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (Pin 1 marked on the package drawing). |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20 V, threshold 1 V min to 3 V max. |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20 V, threshold 1 V min to 3 V max. |
| 5 | D2 | passive | Drain of MOSFET 2; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 6 | D2 | passive | Drain of MOSFET 2; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 7 | D1 | passive | Drain of MOSFET 1; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 8 | D1 | passive | Drain of MOSFET 1; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 40 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=85℃ | 25 | A | TC=85℃ | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 15 | mJ | VDD=30V, VGS=10V, L=0.3mH, IAS=10A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 60 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 35 | ℃/ W | t≤10 s | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.7 | ℃/ W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 17.5 | 19 | mΩ | VGS=10V, ID=15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 23 | 28 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Continuous Forward Current | IS | 40 | A | 2 | |||
| Diode Pulse Current | IS,pulse | 120 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.87 | 1.2 | V | VGS=0V, IS=10A, Tj=25℃ | 2 | |
| Total Gate Charge | Qg | 13 | nC | VDD=50V, VGS=6V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 5.5 | nC | VDD=50V, VGS=6V, ID=10A | 2 | ||
| Turn-On Delay Time | Td(on) | 8 | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 | ||
| Rise Time | Tr | 12 | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 20 | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 | ||
| Fall Time | Tf | 7 | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 | ||
| Input Capacitance | Ciss | 1200 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 350 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Forward Transconductance | gfs | 18 | S | VDS=5V, ID=10A | 2 | ||
| Gate Resistance | Rg | 3 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
CMSA018DN10 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa018dn10-etched.step/cmsa018dn10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa018dn10.step/cmsa018dn10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
329eecdf24a8436a, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMSA018DN10
**Cmos(广东场效应半导体)** · IC · DFN-8(5x6)
CMSA018DN10 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (Pin 1 marked on the package drawing). |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20 V, threshold 1 V min to 3 V max. |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20 V, threshold 1 V min to 3 V max. |
| 5 | D2 | passive | Drain of MOSFET 2; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 6 | D2 | passive | Drain of MOSFET 2; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 7 | D1 | passive | Drain of MOSFET 1; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 8 | D1 | passive | Drain of MOSFET 1; VDS rated 100 V, continuous 40 A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 40 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=85℃ | | | 25 | A | TC=85℃ | 1 |
| Pulsed Drain Current | IDM | | | 120 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 15 | mJ | VDD=30V, VGS=10V, L=0.3mH, IAS=10A | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 60 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 35 | ℃/ W | t≤10 s | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 2.7 | ℃/ W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 17.5 | 19 | mΩ | VGS=10V, ID=15A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 23 | 28 | mΩ | VGS=4.5V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=100V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Diode Continuous Forward Current | IS | | | 40 | A | | 2 |
| Diode Pulse Current | IS,pulse | | | 120 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.87 | 1.2 | V | VGS=0V, IS=10A, Tj=25℃ | 2 |
| Total Gate Charge | Qg | | 13 | | nC | VDD=50V, VGS=6V, ID=10A | 2 |
| Gate-Drain Charge | Qgd | | 5.5 | | nC | VDD=50V, VGS=6V, ID=10A | 2 |
| Turn-On Delay Time | Td(on) | | 8 | | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 |
| Rise Time | Tr | | 12 | | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 20 | | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 |
| Fall Time | Tf | | 7 | | ns | VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω | 2 |
| Input Capacitance | Ciss | | 1200 | | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 350 | | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 40 | | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Forward Transconductance | gfs | | 18 | | S | VDS=5V, ID=10A | 2 |
| Gate Resistance | Rg | | 3 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `CMSA018DN10`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa018dn10-etched.step` / `cmsa018dn10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa018dn10.step` / `cmsa018dn10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603187434838908928) (3 pp, sha256 `329eecdf24a8436a`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cmsa018dn10-datasheet.pdf)