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CMSA018DN10

Public Made by Adom

by adom

Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA018DN10

Cmos(广东场效应半导体) · IC · DFN-8(5x6)

CMSA018DN10 from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (Pin 1 marked on the package drawing).
2 G1 input Gate of MOSFET 1; VGS rated ±20 V, threshold 1 V min to 3 V max.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2; VGS rated ±20 V, threshold 1 V min to 3 V max.
5 D2 passive Drain of MOSFET 2; VDS rated 100 V, continuous 40 A at TC=25℃.
6 D2 passive Drain of MOSFET 2; VDS rated 100 V, continuous 40 A at TC=25℃.
7 D1 passive Drain of MOSFET 1; VDS rated 100 V, continuous 40 A at TC=25℃.
8 D1 passive Drain of MOSFET 1; VDS rated 100 V, continuous 40 A at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 40 A TC=25℃ 1
Continuous Drain Current ID@TC=85℃ 25 A TC=85℃ 1
Pulsed Drain Current IDM 120 A 1
Single Pulse Avalanche Energy EAS 15 mJ VDD=30V, VGS=10V, L=0.3mH, IAS=10A 1
Total Power Dissipation PD@TC=25℃ 60 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 35 ℃/ W t≤10 s 1
Thermal Resistance, Junction-to-Case RθJC 2.7 ℃/ W Steady State 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 17.5 19 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 23 28 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Continuous Forward Current IS 40 A 2
Diode Pulse Current IS,pulse 120 A 2
Diode Forward Voltage VSD 0.87 1.2 V VGS=0V, IS=10A, Tj=25℃ 2
Total Gate Charge Qg 13 nC VDD=50V, VGS=6V, ID=10A 2
Gate-Drain Charge Qgd 5.5 nC VDD=50V, VGS=6V, ID=10A 2
Turn-On Delay Time Td(on) 8 ns VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω 2
Rise Time Tr 12 ns VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω 2
Turn-Off Delay Time Td(off) 20 ns VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω 2
Fall Time Tf 7 ns VDD=50V, VGEN=10V, RG=1Ω, RL=5Ω 2
Input Capacitance Ciss 1200 pF VDS=50V, VGS=0V, f=1MHz 2
Output Capacitance Coss 350 pF VDS=50V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 40 pF VDS=50V, VGS=0V, f=1MHz 2
Forward Transconductance gfs 18 S VDS=5V, ID=10A 2
Gate Resistance Rg 3 Ω VDS=0V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMSA018DN10
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa018dn10-etched.step / cmsa018dn10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa018dn10.step / cmsa018dn10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 329eecdf24a8436a, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF