# CMSA012N10A

**Cmos** · MOSFETs · DFN-8(5x6)

CMSA012N10A from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated 100 V (BVDSS). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated 100 V (BVDSS). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated 100 V (BVDSS). |
| 4 | G | input | Gate terminal of the MOSFET, with gate-source voltage rated ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 6 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 7 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 8 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V , ID=250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VGS=VDS , ID =250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=100V ,VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS ±20V, VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 13.5 | mΩ | VGS=4.5V , ID=15A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=28A , Tj=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 50 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 35 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 150 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 75 | W | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 56 | mJ | VDD=30V , VGS=10V , L=0.5mH , IAS=15A | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA |  |  | 50 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.66 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `CMSA012N10A`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa012n10a-etched.step` / `cmsa012n10a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa012n10a.step` / `cmsa012n10a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos datasheet](docs/cmsa012n10a-datasheet.pdf) (2 pp, sha256 `6c7656c4f69c6b46`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmsa012n10a-datasheet.pdf)