component
CMSA012N10A
Public Made by Adomby adom
Cmos MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMSA012N10A
Cmos · MOSFETs · DFN-8(5x6)
CMSA012N10A from Cmos, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated 100 V (BVDSS). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated 100 V (BVDSS). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated 100 V (BVDSS). |
| 4 | G | input | Gate terminal of the MOSFET, with gate-source voltage rated ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 6 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 7 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 8 | D | passive | Drain terminal of the MOSFET, rated 100 V drain-source and 50 A continuous drain current at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V , ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS , ID =250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V ,VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS ±20V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 13.5 | mΩ | VGS=4.5V , ID=15A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=28A , Tj=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 35 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | 1 | |||
| Total Power Dissipation | PD | 75 | W | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | VDD=30V , VGS=10V , L=0.5mH , IAS=15A | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.66 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMSA012N10A - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa012n10a-etched.step/cmsa012n10a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa012n10a.step/cmsa012n10a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
6c7656c4f69c6b46, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).