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CMS4892B
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Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CMS4892B
Cmos(广东场效应半导体) · IC · SOP-8
CMS4892B from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet gives VDS 100V and ID 3A at TA=25℃ per channel. |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20V, threshold 1V to 3V at ID=250μA. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet gives VDS 100V and ID 3A at TA=25℃ per channel. |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20V, threshold 1V to 3V at ID=250μA. |
| 5 | D2 | passive | Drain of MOSFET 2, internally connected to pin 6; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
| 6 | D2 | passive | Drain of MOSFET 2, internally connected to pin 5; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
| 7 | D1 | passive | Drain of MOSFET 1, internally connected to pin 8; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
| 8 | D1 | passive | Drain of MOSFET 1, internally connected to pin 7; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOP-8 |
| Category | |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 2.1 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 18 | mJ | Note 1: VDD=50V, VGS=10V, L=1mH, IAS=6A | 1 | ||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | PCB mounted | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 135 | mΩ | VGS=10V, ID=5A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 150 | mΩ | VGS=4.5V, ID=3A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=85V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 3 | A | 2 | |||
| Pulsed Source Current | ISM | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=5A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMS4892B - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms4892b-etched.step/cms4892b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms4892b.step/cms4892b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
5e33174cf051f36e, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CMS4892B
**Cmos(广东场效应半导体)** · IC · SOP-8
CMS4892B from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet gives VDS 100V and ID 3A at TA=25℃ per channel. |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20V, threshold 1V to 3V at ID=250μA. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet gives VDS 100V and ID 3A at TA=25℃ per channel. |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20V, threshold 1V to 3V at ID=250μA. |
| 5 | D2 | passive | Drain of MOSFET 2, internally connected to pin 6; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
| 6 | D2 | passive | Drain of MOSFET 2, internally connected to pin 5; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
| 7 | D1 | passive | Drain of MOSFET 1, internally connected to pin 8; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
| 8 | D1 | passive | Drain of MOSFET 1, internally connected to pin 7; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOP-8 |
| Category | |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 2.1 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 12 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 18 | mJ | Note 1: VDD=50V, VGS=10V, L=1mH, IAS=6A | 1 |
| Total Power Dissipation | PD | | | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | PCB mounted | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 135 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 150 | mΩ | VGS=4.5V, ID=3A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=85V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 3 | A | | 2 |
| Pulsed Source Current | ISM | | | 12 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=5A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `CMS4892B`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cms4892b-etched.step` / `cms4892b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cms4892b.step` / `cms4892b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758072115424190464) (4 pp, sha256 `5e33174cf051f36e`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cms4892b-datasheet.pdf)