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CMS4892B

Public Made by Adom

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Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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CMS4892B

Cmos(广东场效应半导体) · IC · SOP-8

CMS4892B from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the datasheet gives VDS 100V and ID 3A at TA=25℃ per channel.
2 G1 input Gate of MOSFET 1; VGS rated ±20V, threshold 1V to 3V at ID=250μA.
3 S2 passive Source of MOSFET 2; the datasheet gives VDS 100V and ID 3A at TA=25℃ per channel.
4 G2 input Gate of MOSFET 2; VGS rated ±20V, threshold 1V to 3V at ID=250μA.
5 D2 passive Drain of MOSFET 2, internally connected to pin 6; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V.
6 D2 passive Drain of MOSFET 2, internally connected to pin 5; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V.
7 D1 passive Drain of MOSFET 1, internally connected to pin 8; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V.
8 D1 passive Drain of MOSFET 1, internally connected to pin 7; VDS max 100V, RDS(ON) below 135mΩ at VGS=10V.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 3 A TA=25℃ 1
Continuous Drain Current ID 2.1 A TA=70℃ 1
Pulsed Drain Current IDM 12 A 1
Single Pulse Avalanche Energy EAS 18 mJ Note 1: VDD=50V, VGS=10V, L=1mH, IAS=6A 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W PCB mounted 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 135 mΩ VGS=10V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 150 mΩ VGS=4.5V, ID=3A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=85V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 3 A 2
Pulsed Source Current ISM 12 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: CMS4892B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cms4892b-etched.step / cms4892b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cms4892b.step / cms4892b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256 5e33174cf051f36e, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF