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CMP7N65A

Cmos(广东场效应半导体) · MOSFETs · TO-220

CMP7N65A from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET, with gate-source voltage rated at ±30 V (VGSS) and a gate threshold of 2 V to 4 V.
2 D passive Drain terminal, rated for 650 V drain-source voltage (VDSS) and 7 A continuous drain current per the product summary.
3 S passive Source terminal, the reference for VGS, with maximum continuous body-diode forward current of 7 A (IS).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (high temperature) IDSS 10 µA VDS = 520 V, TC=125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 1.3 Ω VGS = 10 V, ID = 3.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A 2
Drain-Source Diode Forward Voltage VSD 0.86 1.4 V VGS = 0 V, IS = 7A 2
Drain-Source Voltage VDSS 650 V 1
Drain Current - Continuous ID 7 A TC = 25℃ 1
Drain Current - Continuous ID 4.2 A TC = 100℃ 1
Drain Current - Pulsed IDM 28 A Pulsed, note 1 1
Gate-Source Voltage VGSS 30 V 1
Single Pulsed Avalanche Energy EAS 735 mJ 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns 1
Power Dissipation PD 160 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum lead temperature for soldering purposes TL 300 ℃ 1/8 from case for 5 seconds 1
Thermal Resistance, Junction-to-Case R JC 0.78 ℃/W 1
Thermal Resistance, Case-to-Sink R CS 0.5 ℃/W Typ. 1
Thermal Resistance, Junction-to-Ambient R JA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: CMP7N65A
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp7n65a-etched.step / cmp7n65a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp7n65a.step / cmp7n65a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 d32dd70b8f4586e4, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF