# CMP110N08

**Cmos(广东场效应半导体)** · MOSFETs · TO-220

CMP110N08 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; threshold VGS(th) 2 to 4 V at VDS=VGS, ID=250uA, with absolute maximum VGS of ±25 V. |
| 2 | D | passive | Drain (also connected to the tab); VDS max 80 V, continuous current 110 A at TC=25℃ and pulsed 440 A. |
| 3 | S | passive | Source; continuous body-diode source current IS is 110 A and pulsed ISM is 440 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 80 | V |  | 1 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 110 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 80 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 440 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 1322 | mJ |  | 1 |
| Total Power Dissipation | PD |  |  | 250 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | R JA |  |  | 91 | ℃/W | min. footprint | 1 |
| Thermal Resistance Junction-case | R JC |  |  | 0.5 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=80V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 100 | uA | VDS=80V, VGS=0V, temperature symbol garbled in source | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Diode Forward Voltage | VSD |  | 0.86 | 1.4 | V | VGS=0V, IS=40A | 2 |
| Continuous Source Current | IS |  |  | 110 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | 440 | A | VG=VD=0V, Force Current | 2 |

## CAD (KiCad official)

- Symbol: `CMP110N08`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `cmp110n08-etched.step` / `cmp110n08-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmp110n08.step` / `cmp110n08.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590919852427329536) (3 pp, sha256 `fd3307b3836ff754`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmp110n08-datasheet.pdf)