component
CMP110N08
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| cmp110n08-etched.glb | 13d ago |
| cmp110n08-etched.step | 13d ago |
| cmp110n08-hero.glb | 13d ago |
| cmp110n08-hero.overlay.json | 13d ago |
| cmp110n08.glb | 13d ago |
| cmp110n08.kicad_mod | 13d ago |
| cmp110n08.kicad_sym | 13d ago |
| cmp110n08.lbr | 13d ago |
| cmp110n08.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
CMP110N08
Cmos(广东场效应半导体) · MOSFETs · TO-220
CMP110N08 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; threshold VGS(th) 2 to 4 V at VDS=VGS, ID=250uA, with absolute maximum VGS of ±25 V. |
| 2 | D | passive | Drain (also connected to the tab); VDS max 80 V, continuous current 110 A at TC=25℃ and pulsed 440 A. |
| 3 | S | passive | Source; continuous body-diode source current IS is 110 A and pulsed ISM is 440 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | 110 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 440 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1322 | mJ | 1 | |||
| Total Power Dissipation | PD | 250 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | R JA | 91 | ℃/W | min. footprint | 1 | ||
| Thermal Resistance Junction-case | R JC | 0.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=80V, VGS=0V, temperature symbol garbled in source | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 0.86 | 1.4 | V | VGS=0V, IS=40A | 2 | |
| Continuous Source Current | IS | 110 | A | 2 | |||
| Pulsed Source Current | ISM | 440 | A | VG=VD=0V, Force Current | 2 |
CAD (KiCad official)
- Symbol:
CMP110N08 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
cmp110n08-etched.step/cmp110n08-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmp110n08.step/cmp110n08.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
fd3307b3836ff754, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).