# CME15N10

**Cmos(广东场效应半导体)** · MOSFETs · SOT-89

CME15N10 from Cmos(广东场效应半导体), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 100V N-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 100 V and continuous drain current is 10 A at TC=25℃. |
| 3 | S | passive | Source terminal; continuous source current is rated 15 A in the diode characteristics. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 85 | mΩ | VGS=10V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 96 | 120 | mΩ | VGS=4.5V, ID=1A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 15 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=2A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 10 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 30 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 3 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62.5 | ℃/ W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 6 | ℃/ W |  | 1 |

## CAD (KiCad official)

- Symbol: `CME15N10`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `cme15n10-etched.step` / `cme15n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cme15n10.step` / `cme15n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590905137290964992) (4 pp, sha256 `900ab8f643e5df45`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cme15n10-datasheet.pdf)