component
CME15N10
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| cme15n10-etched.glb | 13d ago |
| cme15n10-etched.step | 13d ago |
| cme15n10-hero.glb | 13d ago |
| cme15n10-hero.overlay.json | 13d ago |
| cme15n10.glb | 13d ago |
| cme15n10.kicad_mod | 13d ago |
| cme15n10.kicad_sym | 13d ago |
| cme15n10.lbr | 13d ago |
| cme15n10.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
CME15N10
Cmos(广东场效应半导体) · MOSFETs · SOT-89
CME15N10 from Cmos(广东场效应半导体), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 100V N-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 100 V and continuous drain current is 10 A at TC=25℃. |
| 3 | S | passive | Source terminal; continuous source current is rated 15 A in the diode characteristics. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 75 | 85 | mΩ | VGS=10V, ID=2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 96 | 120 | mΩ | VGS=4.5V, ID=1A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 15 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=2A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 6 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Total Power Dissipation | PD | 3 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/ W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 6 | ℃/ W | 1 |
CAD (KiCad official)
- Symbol:
CME15N10 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
cme15n10-etched.step/cme15n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cme15n10.step/cme15n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
900ab8f643e5df45, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).