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CMD60N68K

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMD60N68K

Cmos · MOSFETs · TO-252

CMD60N68K from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum (VGS), with a gate threshold voltage of 4 V max at ID=250μA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage is rated at 68 V with 60 A continuous drain current at TC=25℃ and 240 A pulsed.
3 S passive Source; continuous body-diode source current is 60 A and pulsed source current is 240 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 68 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 60 A TC=25℃ 1
Continuous Drain Current ID 48 A TC=100℃ 1
Pulsed Drain Current IDM 240 A Note 1 1
Single Pulse Avalanche Energy EAS 312 mJ VDD=20V, VGS=10V, L=1.0mH, IAS=25A (Note 2) 1
Total Power Dissipation PD 110 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 51 ℃/W 1
Thermal Resistance Junction-Case RθJC 1.14 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 68 V VGS=0V, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 11 mΩ VGS=10V, ID=20A 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=60V, VGS=0V, TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 60 A 2
Pulsed Source Current ISM 240 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 0.87 1.2 V VGS=0V, IS=20A, TJ=25℃ 2
Threshold voltage VGS(th) 4 V VGS=VDS, ID=250μA 2
Forward Transconductance gfs 20 S VDS=5V, ID=20A 2
Gate Resistance Rg 2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 47 nC VDS=54V, VGS=10V, ID=30A 2
Gate-Drain Charge Qgd 20 nC VDS=54V, VGS=10V, ID=30A 2
Turn-On Delay Time Td(on) 15 ns VDD=34V, VGS=10V, RG=4.7Ω, ID=30A 2
Rise Time Tr 45 ns VDD=34V, VGS=10V, RG=4.7Ω, ID=30A 2
Turn-Off Delay Time Td(off) 35 ns VDD=34V, VGS=10V, RG=4.7Ω, ID=30A 2
Fall Time Tf 15 ns VDD=34V, VGS=10V, RG=4.7Ω, ID=30A 2
Input Capacitance Ciss 3000 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 200 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 170 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 13 ns di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 4 nC VGS=0V, IS=30A 2

CAD (KiCad official)

  • Symbol: CMD60N68K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd60n68k-etched.step / cmd60n68k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd60n68k.step / cmd60n68k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (6 pp, sha256 59bf66ae07d61e8a, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF