component
CMD60N68K
Public Made by Adomby adom
Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| cmd60n68k-etched.glb | 14d ago |
| cmd60n68k-etched.step | 14d ago |
| cmd60n68k-hero.glb | 14d ago |
| cmd60n68k-hero.overlay.json | 14d ago |
| cmd60n68k.glb | 14d ago |
| cmd60n68k.kicad_mod | 14d ago |
| cmd60n68k.kicad_sym | 14d ago |
| cmd60n68k.lbr | 14d ago |
| cmd60n68k.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
CMD60N68K
Cmos · MOSFETs · TO-252
CMD60N68K from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum (VGS), with a gate threshold voltage of 4 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage is rated at 68 V with 60 A continuous drain current at TC=25℃ and 240 A pulsed. |
| 3 | S | passive | Source; continuous body-diode source current is 60 A and pulsed source current is 240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 68 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 48 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | Note 1 | 1 | ||
| Single Pulse Avalanche Energy | EAS | 312 | mJ | VDD=20V, VGS=10V, L=1.0mH, IAS=25A (Note 2) | 1 | ||
| Total Power Dissipation | PD | 110 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 51 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.14 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11 | mΩ | VGS=10V, ID=20A | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=60V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 60 | A | 2 | |||
| Pulsed Source Current | ISM | 240 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.87 | 1.2 | V | VGS=0V, IS=20A, TJ=25℃ | 2 | |
| Threshold voltage | VGS(th) | 4 | V | VGS=VDS, ID=250μA | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS=5V, ID=20A | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 47 | nC | VDS=54V, VGS=10V, ID=30A | 2 | ||
| Gate-Drain Charge | Qgd | 20 | nC | VDS=54V, VGS=10V, ID=30A | 2 | ||
| Turn-On Delay Time | Td(on) | 15 | ns | VDD=34V, VGS=10V, RG=4.7Ω, ID=30A | 2 | ||
| Rise Time | Tr | 45 | ns | VDD=34V, VGS=10V, RG=4.7Ω, ID=30A | 2 | ||
| Turn-Off Delay Time | Td(off) | 35 | ns | VDD=34V, VGS=10V, RG=4.7Ω, ID=30A | 2 | ||
| Fall Time | Tf | 15 | ns | VDD=34V, VGS=10V, RG=4.7Ω, ID=30A | 2 | ||
| Input Capacitance | Ciss | 3000 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 170 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 13 | ns | di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 4 | nC | VGS=0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
CMD60N68K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd60n68k-etched.step/cmd60n68k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd60n68k.step/cmd60n68k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (6 pp, sha256
59bf66ae07d61e8a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).