# CMD603

**Cmos** · MOSFETs · TO-252-4L

CMD603 from Cmos, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60V, 13A, RDS(ON)≤45mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS max ±20V, threshold 1 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60V, -13A, RDS(ON)≤75mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS max ±20V, threshold -1 to -2.5V. |
| 5 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the exposed tab. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | N-channel; VGS=0V, ID=250μA | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 45 | mΩ | N-channel; VGS=10V, ID=6A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 50 | mΩ | N-channel; VGS=4.5V, ID=4A | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | N-channel; VGS=VDS, ID=250μA | 2 |
| N-ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | N-channel; VDS=48V, VGS=0V | 2 |
| N-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | N-channel; VGS=±20V, VDS=0V | 2 |
| N-ch Diode Forward Voltage | VSD |  |  | 1.2 | V | N-channel; VGS=0V, IS=5A | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | P-channel; VGS=0V, ID=-250μA | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 75 | mΩ | P-channel; VGS=-10V, ID=-5A | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 85 | mΩ | P-channel; VGS=-4.5V, ID=-2A | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | P-channel; VGS=VDS, ID=-250μA | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | -1 | uA | P-channel; VDS=-48V, VGS=0V | 3 |
| P-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | P-channel; VGS=±20V, VDS=0V | 3 |
| P-ch Diode Forward Voltage | VSD |  |  | -1.2 | V | P-channel; VGS=0V, IS=-5A | 3 |
| N-ch Drain-Source Voltage | VDS |  |  | 60 | V | N-channel | 1 |
| N-ch Gate-Source Voltage | VGS | -20 |  | 20 | V | N-channel | 1 |
| N-ch Continuous Drain Current | ID |  |  | 13 | A | N-channel; TC=25℃ | 1 |
| N-ch Pulsed Drain Current | IDM |  |  | 39 | A | N-channel | 1 |
| N-ch Power Dissipation | PD |  |  | 27 | W | N-channel; TC=25℃ | 1 |
| P-ch Drain-Source Voltage | VDS |  |  | -60 | V | P-channel | 1 |
| P-ch Gate-Source Voltage | VGS | -20 |  | 20 | V | P-channel | 1 |
| P-ch Continuous Drain Current | ID |  |  | -13 | A | P-channel; TC=25℃ | 1 |
| P-ch Pulsed Drain Current | IDM |  |  | -39 | A | P-channel | 1 |
| P-ch Power Dissipation | PD |  |  | 43 | W | P-channel; TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| N-ch Junction-to-Ambient Thermal Resistance | RθJA |  |  | 60 | ℃/W | N-channel | 1 |
| N-ch Junction-to-Case Thermal Resistance | RθJc |  |  | 5.5 | ℃/W | N-channel | 1 |
| P-ch Junction-to-Ambient Thermal Resistance | RθJA |  |  | 60 | ℃/W | P-channel | 2 |
| P-ch Junction-to-Case Thermal Resistance | RθJC |  |  | 3.5 | ℃/W | P-channel | 2 |
| N-ch Total Gate Charge | Qg |  | 8 |  | nC | N-channel; VDS=30V, VGS=10V, ID=12A | 2 |
| N-ch Input Capacitance | Ciss |  | 860 |  | pF | N-channel; VDS=30V, VGS=0V, f=1MHz | 2 |
| N-ch Output Capacitance | Coss |  | 52 |  | pF | N-channel; VDS=30V, VGS=0V, f=1MHz | 2 |
| N-ch Reverse Transfer Capacitance | Crss |  | 42 |  | pF | N-channel; VDS=30V, VGS=0V, f=1MHz | 2 |
| P-ch Total Gate Charge | Qg |  | 16 |  | nC | P-channel; VDS=-30V, VGS=-10V, ID=-12A | 3 |
| P-ch Input Capacitance | Ciss |  | 1550 |  | pF | P-channel; VDS=-30V, VGS=0V, f=1MHz | 3 |
| P-ch Output Capacitance | Coss |  | 68 |  | pF | P-channel; VDS=-30V, VGS=0V, f=1MHz | 3 |
| P-ch Reverse Transfer Capacitance | Crss |  | 49 |  | pF | P-channel; VDS=-30V, VGS=0V, f=1MHz | 3 |

## CAD (KiCad official)

- Symbol: `CMD603`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files: `cmd603-etched.step` / `cmd603-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmd603.step` / `cmd603.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos datasheet](docs/cmd603-datasheet.pdf) (3 pp, sha256 `345fc12ef68052db`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmd603-datasheet.pdf)