component
CMD603
Public Made by Adomby adom
Cmos MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMD603
Cmos · MOSFETs · TO-252-4L
CMD603 from Cmos, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60V, 13A, RDS(ON)≤45mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS max ±20V, threshold 1 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60V, -13A, RDS(ON)≤75mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS max ±20V, threshold -1 to -2.5V. |
| 5 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the exposed tab. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 | V | N-channel; VGS=0V, ID=250μA | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 45 | mΩ | N-channel; VGS=10V, ID=6A | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 50 | mΩ | N-channel; VGS=4.5V, ID=4A | 2 | ||
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | N-channel; VGS=VDS, ID=250μA | 2 | |
| N-ch Drain-Source Leakage Current | IDSS | 1 | uA | N-channel; VDS=48V, VGS=0V | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | N-channel; VGS=±20V, VDS=0V | 2 | |
| N-ch Diode Forward Voltage | VSD | 1.2 | V | N-channel; VGS=0V, IS=5A | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 | V | P-channel; VGS=0V, ID=-250μA | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 75 | mΩ | P-channel; VGS=-10V, ID=-5A | 3 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 85 | mΩ | P-channel; VGS=-4.5V, ID=-2A | 3 | ||
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | P-channel; VGS=VDS, ID=-250μA | 3 | |
| P-ch Drain-Source Leakage Current | IDSS | -1 | uA | P-channel; VDS=-48V, VGS=0V | 3 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | P-channel; VGS=±20V, VDS=0V | 3 | |
| P-ch Diode Forward Voltage | VSD | -1.2 | V | P-channel; VGS=0V, IS=-5A | 3 | ||
| N-ch Drain-Source Voltage | VDS | 60 | V | N-channel | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | N-channel | 1 | |
| N-ch Continuous Drain Current | ID | 13 | A | N-channel; TC=25℃ | 1 | ||
| N-ch Pulsed Drain Current | IDM | 39 | A | N-channel | 1 | ||
| N-ch Power Dissipation | PD | 27 | W | N-channel; TC=25℃ | 1 | ||
| P-ch Drain-Source Voltage | VDS | -60 | V | P-channel | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | P-channel | 1 | |
| P-ch Continuous Drain Current | ID | -13 | A | P-channel; TC=25℃ | 1 | ||
| P-ch Pulsed Drain Current | IDM | -39 | A | P-channel | 1 | ||
| P-ch Power Dissipation | PD | 43 | W | P-channel; TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| N-ch Junction-to-Ambient Thermal Resistance | RθJA | 60 | ℃/W | N-channel | 1 | ||
| N-ch Junction-to-Case Thermal Resistance | RθJc | 5.5 | ℃/W | N-channel | 1 | ||
| P-ch Junction-to-Ambient Thermal Resistance | RθJA | 60 | ℃/W | P-channel | 2 | ||
| P-ch Junction-to-Case Thermal Resistance | RθJC | 3.5 | ℃/W | P-channel | 2 | ||
| N-ch Total Gate Charge | Qg | 8 | nC | N-channel; VDS=30V, VGS=10V, ID=12A | 2 | ||
| N-ch Input Capacitance | Ciss | 860 | pF | N-channel; VDS=30V, VGS=0V, f=1MHz | 2 | ||
| N-ch Output Capacitance | Coss | 52 | pF | N-channel; VDS=30V, VGS=0V, f=1MHz | 2 | ||
| N-ch Reverse Transfer Capacitance | Crss | 42 | pF | N-channel; VDS=30V, VGS=0V, f=1MHz | 2 | ||
| P-ch Total Gate Charge | Qg | 16 | nC | P-channel; VDS=-30V, VGS=-10V, ID=-12A | 3 | ||
| P-ch Input Capacitance | Ciss | 1550 | pF | P-channel; VDS=-30V, VGS=0V, f=1MHz | 3 | ||
| P-ch Output Capacitance | Coss | 68 | pF | P-channel; VDS=-30V, VGS=0V, f=1MHz | 3 | ||
| P-ch Reverse Transfer Capacitance | Crss | 49 | pF | P-channel; VDS=-30V, VGS=0V, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
CMD603 - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
cmd603-etched.step/cmd603-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd603.step/cmd603.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (3 pp, sha256
345fc12ef68052db, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).