component
CMD50N06N
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCMD50N06N
Cmos(广东场效应半导体) · MOSFETs · TO-252
CMD50N06N from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the N-channel MOSFET, with VGS rated ±20 V absolute maximum and gate threshold of 1 to 3 V at ID=250μA. |
| 2 | D | passive | Drain (center lead, shortened stub, connected to the drain tab); VDS rated 60 V and continuous ID 50 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current 50 A and pulsed source current 200 A through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 35 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 90 | mJ | 1 | |||
| Total Power Dissipation | PD | 75 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.67 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=60V, VGS=0V, TJ=100℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 14 | mΩ | VGS=10V, ID=25A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 16 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Continuous Source Current | IS | 50 | A | 2 | |||
| Pulsed Source Current | ISM | 200 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.84 | 1.25 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMD50N06N - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd50n06n-etched.step/cmd50n06n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd50n06n.step/cmd50n06n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (5 pp, sha256
14778cc3b3bab7b1, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).