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CMD11N40

Public Made by Adom

by adom

Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMD11N40

Cmos · MOSFETs · TO-252

CMD11N40 from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the 400 V N-channel MOSFET, with gate-source voltage limited to ±30 V (VGSS).
2 D passive Drain terminal, rated for a drain-source voltage of 400 V (VDSS) and a continuous drain current of 11 A (ID at TC = 25℃ per the product summary).
3 S passive Source terminal, the reference for VGSS and the body-diode rating, with maximum continuous diode forward current IS of 11 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 400 V 1
Drain Current - Continuous ID 6.6 A TC = 100℃ 1
Drain Current - Pulsed IDM 44 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 484 mJ Note 2 1
Power Dissipation PD 100 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case Max. RθJC 1.25 ℃/W Note 3,4 1
Thermal Resistance, Junction-to-Ambient Max. RθJA 62.5 ℃/W Note 5,6 1
Drain-Source Breakdown Voltage BVDSS 400 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 400 V, VGS = 0 V 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = +30V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 0.53 Ω VGS = 10 V, ID = 4.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 11 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 44 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 11A 2
Forward Transconductance gFS 7 S VDS = 10 V, ID = 3 A 2
Input Capacitance Ciss 1400 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 110 pF 2
Reverse Transfer Capacitance Crss 10 pF 2
Turn-On Delay Time td(on) 33.5 ns VDD = 200 V, ID = 11A, RG =20 2
Turn-On Rise Time tr 31.5 ns 2
Turn-Off Delay Time td(off) 83 ns 2
Turn-Off Fall Time tf 56 ns 2
Total Gate Charge Qg 15.7 nC VDS = 320 V, ID = 11A, VGS = 10 V 2
Gate-Source Charge Qgs 4.6 nC 2
Gate-Drain Charge Qgd 4.5 nC 2
Reverse Recovery Time trr 430 ns VGS = 0 V, IS = 11A 2
Reverse Recovery Charge Qrr 3.8 uC dIF/dt =100A/us 2

CAD (KiCad official)

  • Symbol: CMD11N40
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd11n40-etched.step / cmd11n40-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd11n40.step / cmd11n40.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 417d82a214fb421a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF