component
CMD11N40
Public Made by Adomby adom
Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCMD11N40
Cmos · MOSFETs · TO-252
CMD11N40 from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 400 V N-channel MOSFET, with gate-source voltage limited to ±30 V (VGSS). |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 400 V (VDSS) and a continuous drain current of 11 A (ID at TC = 25℃ per the product summary). |
| 3 | S | passive | Source terminal, the reference for VGSS and the body-diode rating, with maximum continuous diode forward current IS of 11 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 400 | V | 1 | |||
| Drain Current - Continuous | ID | 6.6 | A | TC = 100℃ | 1 | ||
| Drain Current - Pulsed | IDM | 44 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 484 | mJ | Note 2 | 1 | ||
| Power Dissipation | PD | 100 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case Max. | RθJC | 1.25 | ℃/W | Note 3,4 | 1 | ||
| Thermal Resistance, Junction-to-Ambient Max. | RθJA | 62.5 | ℃/W | Note 5,6 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 400 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 400 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = +30V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.53 | Ω | VGS = 10 V, ID = 4.5A | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 11 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 44 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 11A | 2 | ||
| Forward Transconductance | gFS | 7 | S | VDS = 10 V, ID = 3 A | 2 | ||
| Input Capacitance | Ciss | 1400 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 110 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | 2 | |||
| Turn-On Delay Time | td(on) | 33.5 | ns | VDD = 200 V, ID = 11A, RG =20 | 2 | ||
| Turn-On Rise Time | tr | 31.5 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 83 | ns | 2 | |||
| Turn-Off Fall Time | tf | 56 | ns | 2 | |||
| Total Gate Charge | Qg | 15.7 | nC | VDS = 320 V, ID = 11A, VGS = 10 V | 2 | ||
| Gate-Source Charge | Qgs | 4.6 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 4.5 | nC | 2 | |||
| Reverse Recovery Time | trr | 430 | ns | VGS = 0 V, IS = 11A | 2 | ||
| Reverse Recovery Charge | Qrr | 3.8 | uC | dIF/dt =100A/us | 2 |
CAD (KiCad official)
- Symbol:
CMD11N40 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd11n40-etched.step/cmd11n40-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd11n40.step/cmd11n40.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (5 pp, sha256
417d82a214fb421a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).