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CMD100N03B

Public Made by Adom

by adom

Cmos(广东场效应半导体) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMD100N03B

Cmos(广东场效应半导体) · IC · TO-252

CMD100N03B from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 1 V min to 3 V max at ID=250uA.
2 D passive Drain (also the metal tab); drain-source voltage 30 V max and continuous current 100 A at TC=25C.
3 S passive Source; continuous body-diode source current 100 A max with forward voltage 1.2 V max at IS=20A.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-252
Category
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 100 A TC=25℃ 1
Continuous Drain Current ID 70 A TC=100℃ 1
Pulsed Drain Current IDM 400 A Repetitive rating; pulse width limited by max junction temperature (note 1) 1
Single Pulse Avalanche Energy EAS 400 mJ VD=15V, L=0.5mH, ID=40A (note 2) 1
Total Power Dissipation PD 120 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ 175 ℃ 1
Thermal Resistance Junction-case RθJC 1.04 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 100 A 2
Pulsed Source Current ISM 400 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=20A, TJ=25℃ 2
Forward Transconductance gfs 32 S VDS=5V, ID=15A 2
Gate Resistance Rg 2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 67 nC VDD=15V, ID=30A, VGS=10V (as printed in gate-charge/switching block; see review) 2
Gate-Source Charge Qgs 10 nC VDD=15V, ID=30A, VGS=10V (as printed in gate-charge/switching block; see review) 2
Gate-Drain Charge Qgd 18 nC VDD=15V, ID=30A, VGS=10V (as printed in gate-charge/switching block; see review) 2
Turn-On Delay Time Td(on) 20 ns VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) 2
Rise Time Tr 60 ns VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) 2
Turn-Off Delay Time Td(off) 110 ns VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) 2
Fall Time Tf 85 ns VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) 2
Input Capacitance Ciss 3200 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 350 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 300 pF VDS=25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMD100N03B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd100n03b-etched.step / cmd100n03b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd100n03b.step / cmd100n03b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256 942a13ffd3fc28c1, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF