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CMD100N03B
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Cmos(广东场效应半导体) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMD100N03B
Cmos(广东场效应半导体) · IC · TO-252
CMD100N03B from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1 V min to 3 V max at ID=250uA. |
| 2 | D | passive | Drain (also the metal tab); drain-source voltage 30 V max and continuous current 100 A at TC=25C. |
| 3 | S | passive | Source; continuous body-diode source current 100 A max with forward voltage 1.2 V max at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | Repetitive rating; pulse width limited by max junction temperature (note 1) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | VD=15V, L=0.5mH, ID=40A (note 2) | 1 | ||
| Total Power Dissipation | PD | 120 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | 175 | ℃ | 1 | |||
| Thermal Resistance Junction-case | RθJC | 1.04 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4 | mΩ | VGS=10V, ID=20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6 | mΩ | VGS=4.5V, ID=20A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 100 | A | 2 | |||
| Pulsed Source Current | ISM | 400 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A, TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 32 | S | VDS=5V, ID=15A | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 67 | nC | VDD=15V, ID=30A, VGS=10V (as printed in gate-charge/switching block; see review) | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDD=15V, ID=30A, VGS=10V (as printed in gate-charge/switching block; see review) | 2 | ||
| Gate-Drain Charge | Qgd | 18 | nC | VDD=15V, ID=30A, VGS=10V (as printed in gate-charge/switching block; see review) | 2 | ||
| Turn-On Delay Time | Td(on) | 20 | ns | VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) | 2 | ||
| Rise Time | Tr | 60 | ns | VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) | 2 | ||
| Turn-Off Delay Time | Td(off) | 110 | ns | VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) | 2 | ||
| Fall Time | Tf | 85 | ns | VDD=15V, ID=30A, RG=12Ω, VGS=10V (as printed in switching block; see review) | 2 | ||
| Input Capacitance | Ciss | 3200 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 350 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 300 | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
CMD100N03B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd100n03b-etched.step/cmd100n03b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd100n03b.step/cmd100n03b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
942a13ffd3fc28c1, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).