component
CM4407
Public Made by Adomby adom
Applied Power MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CM4407
Applied Power · MOSFETs · SO-8
CM4407 from Applied Power, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; drain-source voltage rated -30V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; continuous drain current rated -12.3A at TA=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; body-diode continuous current is -12.3A. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±25V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is -30V maximum. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; pulsed drain current is -48.2A maximum. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; RDS(on) is below 12.5mΩ at VGS=-10V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; RDS(on) is below 25mΩ at VGS=-4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Applied Power |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -30 | V | 1 | |||
| Gate-source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | -12.3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -10.8 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -48.2 | A | Pulse test note (1) | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | TA=25°C (note 2) | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 50 | °C/W | Note (2) | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V,ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=- 30V,VGS=0V,TC=25°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS,ID=-250μA | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 9 | 11 | mΩ | VGS=-20V,ID=-12A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 10.2 | 12.5 | mΩ | VGS=-10V,ID=-12A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 16 | 25 | mΩ | VGS=-4.5V,ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-12.3A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -12.3 | A | 2 |
CAD (KiCad official)
- Symbol:
CM4407 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
cm4407-etched.step/cm4407-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cm4407.step/cm4407.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Applied Power datasheet (5 pp, sha256
a467130bd29818b5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CM4407
**Applied Power** · MOSFETs · SO-8
CM4407 from Applied Power, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; drain-source voltage rated -30V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; continuous drain current rated -12.3A at TA=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; body-diode continuous current is -12.3A. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±25V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is -30V maximum. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; pulsed drain current is -48.2A maximum. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; RDS(on) is below 12.5mΩ at VGS=-10V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; RDS(on) is below 25mΩ at VGS=-4.5V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Applied Power |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | -30 | V | | 1 |
| Gate-source Voltage | VGS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | | | -12.3 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | -10.8 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | -48.2 | A | Pulse test note (1) | 1 |
| Total Power Dissipation | PD | | | 2.5 | W | TA=25°C (note 2) | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 50 | °C/W | Note (2) | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V,ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=- 30V,VGS=0V,TC=25°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 9 | 11 | mΩ | VGS=-20V,ID=-12A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 10.2 | 12.5 | mΩ | VGS=-10V,ID=-12A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 16 | 25 | mΩ | VGS=-4.5V,ID=-10A | 2 |
| Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | IS=-12.3A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -12.3 | A | | 2 |
## CAD (KiCad official)
- Symbol: `CM4407`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `cm4407-etched.step` / `cm4407-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cm4407.step` / `cm4407.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Applied Power datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590466777663496192) (5 pp, sha256 `a467130bd29818b5`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cm4407-datasheet.pdf)