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CM4407

Public Made by Adom

by adom

Applied Power MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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CM4407

Applied Power · MOSFETs · SO-8

CM4407 from Applied Power, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; drain-source voltage rated -30V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3; continuous drain current rated -12.3A at TA=25°C.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2; body-diode continuous current is -12.3A.
4 G input Gate of the P-channel MOSFET; gate-source voltage is limited to ±25V.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is -30V maximum.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; pulsed drain current is -48.2A maximum.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; RDS(on) is below 12.5mΩ at VGS=-10V.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; RDS(on) is below 25mΩ at VGS=-4.5V.

Key specifications

Parameter Value
Manufacturer Applied Power
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS -30 V 1
Gate-source Voltage VGS -25 25 V 1
Continuous Drain Current ID -12.3 A TA=25°C 1
Continuous Drain Current ID -10.8 A TA=70°C 1
Pulsed Drain Current IDM -48.2 A Pulse test note (1) 1
Total Power Dissipation PD 2.5 W TA=25°C (note 2) 1
Thermal Resistance Junction-to-Ambient RθJA 50 °C/W Note (2) 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V,ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=- 30V,VGS=0V,TC=25°C 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±25V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS,ID=-250μA 2
Static Drain-Source on-Resistance RDS(on) 9 11 mΩ VGS=-20V,ID=-12A 2
Static Drain-Source on-Resistance RDS(on) 10.2 12.5 mΩ VGS=-10V,ID=-12A 2
Static Drain-Source on-Resistance RDS(on) 16 25 mΩ VGS=-4.5V,ID=-10A 2
Diode Forward Voltage VSD -0.8 -1.2 V IS=-12.3A,VGS=0V 2
Maximum Body-Diode Continuous Current IS -12.3 A 2

CAD (KiCad official)

  • Symbol: CM4407
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: cm4407-etched.step / cm4407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cm4407.step / cm4407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Applied Power datasheet (5 pp, sha256 a467130bd29818b5, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF