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CJU80SN10

Public Made by Adom

by adom

Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJU80SN10

Changjing · MOSFETs · TO-252-2L

CJU80SN10 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal; gate threshold VGS(th) is 1.3 V min to 2.5 V max at VDS=VGS, ID=250 µA, and gate leakage is tested at VGS=±20 V.
2 DRAIN passive Drain terminal, also the metal tab; rated 100 V drain-source, 80 A continuous and 320 A pulsed drain current.
3 SOURCE passive Source terminal; body-diode continuous forward current is 80 A and pulsed is 320 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 100 V 1
Continuous drain current ID 80 A 1
Pulsed drain current IDM 320 A 1
Single pulsed avalanche energy EAS 280 mJ 1
Operating junction and storage temperature range TJ, Tstg -55 150 ℃ 1
Power dissipation PD 125 W 1
Thermal resistance, junction to case RθJC 1 ℃/W 1
Drain-source breakdown voltage V(BR)DSS 100 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =80V, VGS =0V, TJ =25℃ 2
Zero gate voltage drain current IDSS 100 µA VDS =80V, VGS =0V, TJ =125℃ 2
Gate-body leakage current IGSS -100 100 nA VDS =0V, VGS =±20V 2
Gate-threshold voltage VGS(th) 1.3 1.9 2.5 V VDS =VGS, ID =250µA 2
Static drain-source on-state resistance RDS(on) 6.2 mΩ VGS =10V, ID =20A 2
Static drain-source on-state resistance RDS(on) 8.8 10.5 mΩ VGS =4.5V, ID =15A 2
Gate resistance Rg 3 Ω f =1MHz 2
Input capacitance Ciss 2100 3150 pF VDS =50V, VGS =0V, f =500KHz 2
Output capacitance Coss 420 650 pF VDS =50V, VGS =0V, f =500KHz 2
Reverse transfer capacitance Crss 4.5 8 pF VDS =50V, VGS =0V, f =500KHz 2
Total gate charge Qg 50 100 nC VGS=10V, VDS=50V, ID=20A 2
Gate-source charge Qgs 5.2 10 nC VGS=10V, VDS=50V, ID=20A 2
Gate-drain charge Qgd 9.2 18 nC VGS=10V, VDS=50V, ID=20A 2
Turn-on delay time td(on) 6 ns VDD=50V, ID=20A, VGS=10V, RG=3Ω 2
Turn-on rise time tr 4.8 ns VDD=50V, ID=20A, VGS=10V, RG=3Ω 2
Turn-off delay time td(off) 22 ns VDD=50V, ID=20A, VGS=10V, RG=3Ω 2
Turn-off fall time tf 5.6 ns VDD=50V, ID=20A, VGS=10V, RG=3Ω 2
Drain-source diode forward voltage VSD 1.2 V VGS =0V, IS=10A 2
Continuous drain-source diode forward current IS 80 A 2
Pulsed drain-source diode forward current ISM 320 A 2

CAD (KiCad official)

  • Symbol: CJU80SN10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju80sn10-etched.step / cju80sn10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju80sn10.step / cju80sn10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 29a61d858c16e0ee, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF