component
CJU80SN10
Public Made by Adomby adom
Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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cju80sn10: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
2 files changed
+379−1
README.md+35@@ -21,6 +21,41 @@ CJU80SN10 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDSS | | | 100 | V | | 1 |+| Continuous drain current | ID | | | 80 | A | | 1 |+| Pulsed drain current | IDM | | | 320 | A | | 1 |+| Single pulsed avalanche energy | EAS | | | 280 | mJ | | 1 |+| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |+| Power dissipation | PD | | | 125 | W | | 1 |+| Thermal resistance, junction to case | RθJC | | | 1 | ℃/W | | 1 |+| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID =250µA | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =80V, VGS =0V, TJ =25℃ | 2 |+| Zero gate voltage drain current | IDSS | | | 100 | µA | VDS =80V, VGS =0V, TJ =125℃ | 2 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |+| Gate-threshold voltage | VGS(th) | 1.3 | 1.9 | 2.5 | V | VDS =VGS, ID =250µA | 2 |+| Static drain-source on-state resistance | RDS(on) | | 6.2 | | mΩ | VGS =10V, ID =20A | 2 |+| Static drain-source on-state resistance | RDS(on) | | 8.8 | 10.5 | mΩ | VGS =4.5V, ID =15A | 2 |+| Gate resistance | Rg | | 3 | | Ω | f =1MHz | 2 |+| Input capacitance | Ciss | | 2100 | 3150 | pF | VDS =50V, VGS =0V, f =500KHz | 2 |+| Output capacitance | Coss | | 420 | 650 | pF | VDS =50V, VGS =0V, f =500KHz | 2 |+| Reverse transfer capacitance | Crss | | 4.5 | 8 | pF | VDS =50V, VGS =0V, f =500KHz | 2 |+| Total gate charge | Qg | | 50 | 100 | nC | VGS=10V, VDS=50V, ID=20A | 2 |+| Gate-source charge | Qgs | | 5.2 | 10 | nC | VGS=10V, VDS=50V, ID=20A | 2 |+| Gate-drain charge | Qgd | | 9.2 | 18 | nC | VGS=10V, VDS=50V, ID=20A | 2 |+| Turn-on delay time | td(on) | | 6 | | ns | VDD=50V, ID=20A, VGS=10V, RG=3Ω | 2 |+| Turn-on rise time | tr | | 4.8 | | ns | VDD=50V, ID=20A, VGS=10V, RG=3Ω | 2 |+| Turn-off delay time | td(off) | | 22 | | ns | VDD=50V, ID=20A, VGS=10V, RG=3Ω | 2 |+| Turn-off fall time | tf | | 5.6 | | ns | VDD=50V, ID=20A, VGS=10V, RG=3Ω | 2 |+| Drain-source diode forward voltage | VSD | | 1.2 | | V | VGS =0V, IS=10A | 2 |+| Continuous drain-source diode forward current | IS | | | 80 | A | | 2 |+| Pulsed drain-source diode forward current | ISM | | | 320 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `CJU80SN10`
page.json+344−1@@ -148,6 +148,349 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "29a61d858c16e0ee",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulsed avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 280,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =80V, VGS =0V, TJ =25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS =80V, VGS =0V, TJ =125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS =0V, VGS =±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.3,+ "typ": 1.9,+ "max": 2.5,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.2,+ "max": null,+ "conditions": "VGS =10V, ID =20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 8.8,+ "max": 10.5,+ "conditions": "VGS =4.5V, ID =15A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2100,+ "max": 3150,+ "conditions": "VDS =50V, VGS =0V, f =500KHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 420,+ "max": 650,+ "conditions": "VDS =50V, VGS =0V, f =500KHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4.5,+ "max": 8,+ "conditions": "VDS =50V, VGS =0V, f =500KHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 50,+ "max": 100,+ "conditions": "VGS=10V, VDS=50V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.2,+ "max": 10,+ "conditions": "VGS=10V, VDS=50V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9.2,+ "max": 18,+ "conditions": "VGS=10V, VDS=50V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VDD=50V, ID=20A, VGS=10V, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 4.8,+ "max": null,+ "conditions": "VDD=50V, ID=20A, VGS=10V, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": null,+ "conditions": "VDD=50V, ID=20A, VGS=10V, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5.6,+ "max": null,+ "conditions": "VDD=50V, ID=20A, VGS=10V, RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.2,+ "max": null,+ "conditions": "VGS =0V, IS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain-source diode forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain-source diode forward current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +532,4 @@ "visibility": { "public": true }-}+}