main
Ray Set visibility: public f214929 8d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "cju60sn08",
  "title": "CJU60SN08",
  "brief": "Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "package": "TO-252-2L",
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    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "source": "Component Ocean /api/assign-pns",
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        "status": "quota"
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    "pins": [
      {
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        "name": "GATE",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; gate-threshold voltage VGS(th) is 2.0 V min, 3.0 V typ and 4.0 V max at VDS=VGS, ID=250 µA, and gate leakage is ±100 nA max at VGS=±20 V."
      },
      {
        "number": "2",
        "name": "DRAIN",
        "type": "passive",
        "description": "Drain terminal, connected to the exposed mounting tab; drain-source breakdown voltage is 80 V min at VGS=0 V, ID=250 µA, and RDS(on) is 6.3 mΩ at VGS=10 V, ID=20 A."
      },
      {
        "number": "3",
        "name": "SOURCE",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; continuous body-diode forward current IS is 60 A and pulsed ISM is 240 A."
      }
    ],
    "provenance": {
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      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
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          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "cost_usd": 0.0951,
        "at": "2026-10-18T17:35:43"
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        "pages": 6,
        "sha256": "7071424ed1066b8c",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "centre_offset_mm": 0,
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        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-18",
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  "metadata": {
    "specs": {
      "Manufacturer": "Changjing",
      "Package": "TO-252-2L",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
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      "source": "datasheet",
      "datasheet_sha256": "7071424ed1066b8c89c2a58e10e802eb6d96a9e8816bd837d4cd5ba7e6169b67",
      "rows": [
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          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
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          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
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          "max": 1,
          "conditions": "VDS = 64V, VGS = 0V, TJ = 25℃",
          "source_page": 2,
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          "conditions": "VDS = 64V, VGS = 0V, TJ = 125℃",
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          "name": "Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
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          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VDS = 0V, VGS = ±20V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-threshold voltage",
          "symbol": "VGS(th)",
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          "min": 2,
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          "max": 4,
          "conditions": "VDS = VGS, ID = 250µA",
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          "source": "datasheet"
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        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
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          "max": null,
          "conditions": "VDS = 25V, VGS = 0V, f = 1MHz",
          "source_page": 2,
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        {
          "name": "Output capacitance",
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          "typ": 1053,
          "max": null,
          "conditions": "VDS = 25V, VGS = 0V, f = 1MHz",
          "source_page": 2,
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        {
          "name": "Reverse transfer capacitance",
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          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 18,
          "max": null,
          "conditions": "VDS = 25V, VGS = 0V, f = 1MHz",
          "source_page": 2,
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        {
          "name": "Total gate charge",
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          "kind": "electrical",
          "unit": "nC",
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          "typ": 47.8,
          "max": null,
          "conditions": "VGS = 10V, VDS = 20V, ID = 5A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source charge",
          "symbol": "Qgs",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 12.9,
          "max": null,
          "conditions": "VGS = 10V, VDS = 20V, ID = 5A",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Gate-drain charge",
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          "unit": "nC",
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          "conditions": "VGS = 10V, VDS = 20V, ID = 5A",
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        {
          "name": "Turn-on delay time",
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          "kind": "timing",
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          "min": null,
          "typ": 16,
          "max": null,
          "conditions": "VDD = 30V, ID = 40A, RL = 15Ω, VGS = 10V, RG = 2.5Ω",
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          "source": "datasheet"
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          "name": "Turn-on rise time",
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          "typ": 33,
          "max": null,
          "conditions": "VDD = 30V, ID = 40A, RL = 15Ω, VGS = 10V, RG = 2.5Ω",
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        {
          "name": "Turn-off fall time",
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          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Drain-source diode forward voltage",
          "symbol": "VSD",
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          "max": 1.2,
          "conditions": "VGS = 0V, IS = 20A",
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        },
        {
          "name": "Operating junction and storage temperature range",
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          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
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  "discovery_pitch": "CJU60SN08 (Changjing) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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}