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CJU60SN08

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Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJU60SN08

Changjing · MOSFETs · TO-252-2L

CJU60SN08 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET; gate-threshold voltage VGS(th) is 2.0 V min, 3.0 V typ and 4.0 V max at VDS=VGS, ID=250 µA, and gate leakage is ±100 nA max at VGS=±20 V.
2 DRAIN passive Drain terminal, connected to the exposed mounting tab; drain-source breakdown voltage is 80 V min at VGS=0 V, ID=250 µA, and RDS(on) is 6.3 mΩ at VGS=10 V, ID=20 A.
3 SOURCE passive Source terminal of the N-channel MOSFET; continuous body-diode forward current IS is 60 A and pulsed ISM is 240 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 80 V VGS = 0V, ID = 250µA 2
Zero gate voltage drain current IDSS 1 µA VDS = 64V, VGS = 0V, TJ = 25℃ 2
Zero gate voltage drain current IDSS 10 µA VDS = 64V, VGS = 0V, TJ = 125℃ 2
Gate-body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate-threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Static drain-source on-state resistance RDS(on) 6.3 mΩ VGS = 10V, ID = 20A 2
Input capacitance Ciss 3300 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 1053 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 18 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Total gate charge Qg 47.8 nC VGS = 10V, VDS = 20V, ID = 5A 2
Gate-source charge Qgs 12.9 nC VGS = 10V, VDS = 20V, ID = 5A 2
Gate-drain charge Qgd 10.8 nC VGS = 10V, VDS = 20V, ID = 5A 2
Turn-on delay time td(on) 16 ns VDD = 30V, ID = 40A, RL = 15Ω, VGS = 10V, RG = 2.5Ω 2
Turn-on rise time tr 33 ns VDD = 30V, ID = 40A, RL = 15Ω, VGS = 10V, RG = 2.5Ω 2
Turn-off delay time td(off) 25 ns VDD = 30V, ID = 40A, RL = 15Ω, VGS = 10V, RG = 2.5Ω 2
Turn-off fall time tf 16 ns VDD = 30V, ID = 40A, RL = 15Ω, VGS = 10V, RG = 2.5Ω 2
Drain-source diode forward voltage VSD 1.2 V VGS = 0V, IS = 20A 2
Continuous drain-source diode forward current IS 60 A 2
Pulsed drain-source diode forward current ISM 240 A 2
Operating junction and storage temperature range TJ, Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: CJU60SN08
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju60sn08-etched.step / cju60sn08-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju60sn08.step / cju60sn08.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 7071424ed1066b8c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF