component
CJU12P06
Public Made by Adomby adom
Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJU12P06
Changjing · MOSFETs · TO-252-2L
CJU12P06 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.0 V min to -3.0 V max at ID=-250µA. |
| 2 | DRAIN | passive | Drain terminal (also the tab for heat dissipation); drain-source voltage is -60 V max and continuous drain current is -12 A. |
| 3 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous source diode current IS is -12 A and pulsed ISM is -30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS = -48V, VGS = 0V, TJ = 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | µA | VDS = -48V, VGS = 0V, TJ = 125℃ | 2 | ||
| Gate-threshold voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | 75 | 96 | mΩ | VGS = -10V, ID = -8A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 90 | 150 | mΩ | VGS = -4.5V, ID = -8A | 2 | |
| Drain-source diode forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -12A | 2 | ||
| Continuous drain-source diode forward current | IS | -12 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | -30 | A | 2 | |||
| Drain-Source Voltage | VDS | -60 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | -12 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | Ta=25℃ | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 100 | mJ | VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω, starting TJ=25°C | 1 | ||
| Power Dissipation | PD | 50 | W | Ta=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 100 | ℃/W | Mounted on 1 in2 FR-4 board with 2oz. copper, still air, Ta=25℃ | 1 | ||
| Thermal Resistance from Junction to Case | RθJC | 2.5 | ℃/W | 1 | |||
| Input capacitance | Ciss | 900 | pF | VDS = -25V, VGS = 0V, f = 1MHz | 2 | ||
| Output capacitance | Coss | 115 | pF | VDS = -25V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 40 | pF | VDS = -25V, VGS = 0V, f = 1MHz | 2 | ||
| Total gate charge | Qg | 18 | nC | VGS=-10V, VDS=-20V, ID=-4A | 2 | ||
| Gate-source charge | Qgs | 3.2 | nC | VGS=-10V, VDS=-20V, ID=-4A | 2 | ||
| Gate-drain charge | Qgd | 3.8 | nC | VGS=-10V, VDS=-20V, ID=-4A | 2 | ||
| Turn-on delay time | td(on) | 8 | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 | ||
| Turn-on rise time | tr | 6 | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 | ||
| Turn-off delay time | td(off) | 30 | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 | ||
| Turn-off fall time | tf | 7 | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 |
CAD (KiCad official)
- Symbol:
CJU12P06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
cju12p06-etched.step/cju12p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cju12p06.step/cju12p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
7c4172689ec48523, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJU12P06
**Changjing** · MOSFETs · TO-252-2L
CJU12P06 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.0 V min to -3.0 V max at ID=-250µA. |
| 2 | DRAIN | passive | Drain terminal (also the tab for heat dissipation); drain-source voltage is -60 V max and continuous drain current is -12 A. |
| 3 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous source diode current IS is -12 A and pulsed ISM is -30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -60 | | | V | VGS = 0V, ID = -250µA | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS = -48V, VGS = 0V, TJ = 25℃ | 2 |
| Zero gate voltage drain current | IDSS | | | -50 | µA | VDS = -48V, VGS = 0V, TJ = 125℃ | 2 |
| Gate-threshold voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Static drain-source on-state resistance | RDS(on) | | 75 | 96 | mΩ | VGS = -10V, ID = -8A | 2 |
| Static drain-source on-state resistance | RDS(on) | | 90 | 150 | mΩ | VGS = -4.5V, ID = -8A | 2 |
| Drain-source diode forward voltage | VSD | | | -1.2 | V | VGS = 0V, IS = -12A | 2 |
| Continuous drain-source diode forward current | IS | | | -12 | A | | 2 |
| Pulsed drain-source diode forward current | ISM | | | -30 | A | | 2 |
| Drain-Source Voltage | VDS | | | -60 | V | Ta=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25℃ | 1 |
| Continuous Drain Current | ID | | | -12 | A | Ta=25℃ | 1 |
| Pulsed Drain Current | IDM | | | -30 | A | Ta=25℃ | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 100 | mJ | VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω, starting TJ=25°C | 1 |
| Power Dissipation | PD | | | 50 | W | Ta=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | Mounted on 1 in2 FR-4 board with 2oz. copper, still air, Ta=25℃ | 1 |
| Thermal Resistance from Junction to Case | RθJC | | | 2.5 | ℃/W | | 1 |
| Input capacitance | Ciss | | 900 | | pF | VDS = -25V, VGS = 0V, f = 1MHz | 2 |
| Output capacitance | Coss | | 115 | | pF | VDS = -25V, VGS = 0V, f = 1MHz | 2 |
| Reverse transfer capacitance | Crss | | 40 | | pF | VDS = -25V, VGS = 0V, f = 1MHz | 2 |
| Total gate charge | Qg | | 18 | | nC | VGS=-10V, VDS=-20V, ID=-4A | 2 |
| Gate-source charge | Qgs | | 3.2 | | nC | VGS=-10V, VDS=-20V, ID=-4A | 2 |
| Gate-drain charge | Qgd | | 3.8 | | nC | VGS=-10V, VDS=-20V, ID=-4A | 2 |
| Turn-on delay time | td(on) | | 8 | | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 |
| Turn-on rise time | tr | | 6 | | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 |
| Turn-off delay time | td(off) | | 30 | | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 |
| Turn-off fall time | tf | | 7 | | ns | VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω | 2 |
## CAD (KiCad official)
- Symbol: `CJU12P06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `cju12p06-etched.step` / `cju12p06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cju12p06.step` / `cju12p06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/cju12p06-datasheet.pdf) (6 pp, sha256 `7c4172689ec48523`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cju12p06-datasheet.pdf)