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CJU12P06

Public Made by Adom

by adom

Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJU12P06

Changjing · MOSFETs · TO-252-2L

CJU12P06 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.0 V min to -3.0 V max at ID=-250µA.
2 DRAIN passive Drain terminal (also the tab for heat dissipation); drain-source voltage is -60 V max and continuous drain current is -12 A.
3 SOURCE passive Source terminal of the P-channel MOSFET; continuous source diode current IS is -12 A and pulsed ISM is -30 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -60 V VGS = 0V, ID = -250µA 2
Gate-body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero gate voltage drain current IDSS -1 µA VDS = -48V, VGS = 0V, TJ = 25℃ 2
Zero gate voltage drain current IDSS -50 µA VDS = -48V, VGS = 0V, TJ = 125℃ 2
Gate-threshold voltage VGS(th) -1 -1.8 -3 V VDS = VGS, ID = -250µA 2
Static drain-source on-state resistance RDS(on) 75 96 mΩ VGS = -10V, ID = -8A 2
Static drain-source on-state resistance RDS(on) 90 150 mΩ VGS = -4.5V, ID = -8A 2
Drain-source diode forward voltage VSD -1.2 V VGS = 0V, IS = -12A 2
Continuous drain-source diode forward current IS -12 A 2
Pulsed drain-source diode forward current ISM -30 A 2
Drain-Source Voltage VDS -60 V Ta=25℃ 1
Gate-Source Voltage VGS -20 20 V Ta=25℃ 1
Continuous Drain Current ID -12 A Ta=25℃ 1
Pulsed Drain Current IDM -30 A Ta=25℃ 1
Single Pulsed Avalanche Energy EAS 100 mJ VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω, starting TJ=25°C 1
Power Dissipation PD 50 W Ta=25℃ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Mounted on 1 in2 FR-4 board with 2oz. copper, still air, Ta=25℃ 1
Thermal Resistance from Junction to Case RθJC 2.5 ℃/W 1
Input capacitance Ciss 900 pF VDS = -25V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 115 pF VDS = -25V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 40 pF VDS = -25V, VGS = 0V, f = 1MHz 2
Total gate charge Qg 18 nC VGS=-10V, VDS=-20V, ID=-4A 2
Gate-source charge Qgs 3.2 nC VGS=-10V, VDS=-20V, ID=-4A 2
Gate-drain charge Qgd 3.8 nC VGS=-10V, VDS=-20V, ID=-4A 2
Turn-on delay time td(on) 8 ns VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω 2
Turn-on rise time tr 6 ns VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω 2
Turn-off delay time td(off) 30 ns VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω 2
Turn-off fall time tf 7 ns VDD=-30V, ID=-1A, VGS=-10V, RG=2.5Ω, RL=15Ω 2

CAD (KiCad official)

  • Symbol: CJU12P06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju12p06-etched.step / cju12p06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju12p06.step / cju12p06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 7c4172689ec48523, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF