component

CJU10N10

Public Made by Adom

by adom

Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorscju10n10factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
cju10n10 / README.md
History Download
Ray cju10n10: specified limits as data (metadata.characteristics, 27 rows from the datasheet) 8140d0c 25d ago

CJU10N10

Changjing · MOSFETs · TO-252-2L

CJU10N10 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input MOSFET gate terminal; the datasheet rates gate-source voltage VGS at ±20 V.
2 DRAIN passive MOSFET drain terminal; the datasheet rates drain-source voltage VDS at 100 V and continuous drain current ID at 9.6 A.
3 SOURCE passive MOSFET source terminal; the datasheet specifies body-diode forward voltage VSD of 1.2 V at IS = 9 A with VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V Ta=25℃ 1
Gate-Source Voltage VGS -20 20 V Ta=25℃ 1
Continuous Drain Current ID 9.6 A Ta=25℃ 1
Pulsed Drain Current IDM 38.4 A Ta=25℃ 1
Single Pulsed Avalanche Energy EAS 150 mJ IL=7A, VDD=50V, RG=25Ω, Starting TJ=25℃ (note 1) 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Maximum lead temperature for soldering purposes TL 260 ℃ 1/8" from case for 5 seconds 1
Drain-source breakdown voltage V(BR)DSS 100 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =100V, VGS =0V 2
Gate-body leakage current IGSS -100 100 nA VDS =0V, VGS =±20V 2
Gate-threshold voltage VGS(th) 1.2 2 2.5 V VDS =VGS, ID =250µA 2
Static drain-source on-resistance RDS(on) 0.115 0.14 Ω VGS =10V, ID =5A 2
Continuous drain-source diode forward current IS 9.6 A 2
Pulsed drain-source diode forward current ISM 38.4 A 2
Input capacitance Ciss 690 pF VDS =25V, VGS =0V, f =1MHz 2
Output capacitance Coss 120 pF VDS =25V, VGS =0V, f =1MHz 2
Reverse transfer capacitance Crss 90 pF VDS =25V, VGS =0V, f =1MHz 2
Turn-on delay time td(on) 11 ns VDD=30V, RG=2.5Ω, ID =2A, VGS =10V 2
Turn-on rise time tr 7.4 ns VDD=30V, RG=2.5Ω, ID =2A, VGS =10V 2
Turn-off delay time td(off) 35 ns VDD=30V, RG=2.5Ω, ID =2A, VGS =10V 2
Turn-off fall time tf 9.1 ns VDD=30V, RG=2.5Ω, ID =2A, VGS =10V 2
Total Gate Charge Qg 15.5 nC VDS =30V, VGS =10V, ID =3A 2
Gate-Source Charge Qgs 3.2 nC VDS =30V, VGS =10V, ID =3A 2
Gate-Drain Charge Qgd 4.7 nC VDS =30V, VGS =10V, ID =3A 2
Drain-source diode forward voltage VSD 1.2 V VGS = 0V, IS =9A 2

CAD (KiCad official)

  • Symbol: CJU10N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju10n10-etched.step / cju10n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju10n10.step / cju10n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 b999893442d87cfd, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF