component
CJU10N10
Public Made by Adomby adom
Changjing MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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cju10n10: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+366−1
README.md+34@@ -21,6 +21,40 @@ CJU10N10 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 100 | V | Ta=25℃ | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25℃ | 1 |+| Continuous Drain Current | ID | | | 9.6 | A | Ta=25℃ | 1 |+| Pulsed Drain Current | IDM | | | 38.4 | A | Ta=25℃ | 1 |+| Single Pulsed Avalanche Energy | EAS | | | 150 | mJ | IL=7A, VDD=50V, RG=25Ω, Starting TJ=25℃ (note 1) | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| Maximum lead temperature for soldering purposes | TL | | | 260 | ℃ | 1/8" from case for 5 seconds | 1 |+| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID =250µA | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =100V, VGS =0V | 2 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |+| Gate-threshold voltage | VGS(th) | 1.2 | 2 | 2.5 | V | VDS =VGS, ID =250µA | 2 |+| Static drain-source on-resistance | RDS(on) | | 0.115 | 0.14 | Ω | VGS =10V, ID =5A | 2 |+| Continuous drain-source diode forward current | IS | | | 9.6 | A | | 2 |+| Pulsed drain-source diode forward current | ISM | | | 38.4 | A | | 2 |+| Input capacitance | Ciss | | 690 | | pF | VDS =25V, VGS =0V, f =1MHz | 2 |+| Output capacitance | Coss | | 120 | | pF | VDS =25V, VGS =0V, f =1MHz | 2 |+| Reverse transfer capacitance | Crss | | 90 | | pF | VDS =25V, VGS =0V, f =1MHz | 2 |+| Turn-on delay time | td(on) | | 11 | | ns | VDD=30V, RG=2.5Ω, ID =2A, VGS =10V | 2 |+| Turn-on rise time | tr | | 7.4 | | ns | VDD=30V, RG=2.5Ω, ID =2A, VGS =10V | 2 |+| Turn-off delay time | td(off) | | 35 | | ns | VDD=30V, RG=2.5Ω, ID =2A, VGS =10V | 2 |+| Turn-off fall time | tf | | 9.1 | | ns | VDD=30V, RG=2.5Ω, ID =2A, VGS =10V | 2 |+| Total Gate Charge | Qg | | 15.5 | | nC | VDS =30V, VGS =10V, ID =3A | 2 |+| Gate-Source Charge | Qgs | | 3.2 | | nC | VDS =30V, VGS =10V, ID =3A | 2 |+| Gate-Drain Charge | Qgd | | 4.7 | | nC | VDS =30V, VGS =10V, ID =3A | 2 |+| Drain-source diode forward voltage | VSD | | 1.2 | | V | VGS = 0V, IS =9A | 2 |+ ## CAD (KiCad official) - Symbol: `CJU10N10`
page.json+332−1@@ -147,6 +147,337 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b999893442d87cfd",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9.6,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 38.4,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "IL=7A, VDD=50V, RG=25Ω, Starting TJ=25℃ (note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8\" from case for 5 seconds",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =100V, VGS =0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS =0V, VGS =±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 2,+ "max": 2.5,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.115,+ "max": 0.14,+ "conditions": "VGS =10V, ID =5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain-source diode forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain-source diode forward current",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 38.4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 690,+ "max": null,+ "conditions": "VDS =25V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 120,+ "max": null,+ "conditions": "VDS =25V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 90,+ "max": null,+ "conditions": "VDS =25V, VGS =0V, f =1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDD=30V, RG=2.5Ω, ID =2A, VGS =10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7.4,+ "max": null,+ "conditions": "VDD=30V, RG=2.5Ω, ID =2A, VGS =10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "VDD=30V, RG=2.5Ω, ID =2A, VGS =10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9.1,+ "max": null,+ "conditions": "VDD=30V, RG=2.5Ω, ID =2A, VGS =10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15.5,+ "max": null,+ "conditions": "VDS =30V, VGS =10V, ID =3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.2,+ "max": null,+ "conditions": "VDS =30V, VGS =10V, ID =3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4.7,+ "max": null,+ "conditions": "VDS =30V, VGS =10V, ID =3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.2,+ "max": null,+ "conditions": "VGS = 0V, IS =9A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +519,4 @@ "visibility": { "public": true }-}+}