component
CJS9004A
Public Made by Adomby adom
Changjing MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
CJS9004A
Changjing · MOSFETs · TSSOP-8
CJS9004A from Changjing, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (common-drain configuration), rated VDS 20 V and continuous ID 10 A. |
| 2 | S1 | passive | Source of MOSFET 1, connected in parallel with pin 3; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 3 | S1 | passive | Source of MOSFET 1, connected in parallel with pin 2; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 4 | G1 | input | Gate of MOSFET 1 (ESD protected), maximum gate-source voltage ±12 V, threshold 0.4 to 1.0 V. |
| 5 | G2 | input | Gate of MOSFET 2 (ESD protected), maximum gate-source voltage ±12 V, threshold 0.4 to 1.0 V. |
| 6 | S2 | passive | Source of MOSFET 2, connected in parallel with pin 7; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 7 | S2 | passive | Source of MOSFET 2, connected in parallel with pin 6; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 8 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (common-drain configuration), rated VDS 20 V and continuous ID 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TSSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =16V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -1 | 1 | µA | VGS =±4.5V, VDS = 0V | 2 | |
| Gate-body leakage current | IGSS | -10 | 10 | µA | VGS =±8V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.4 | 1 | V | VDS =VGS, ID =250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 8.5 | 10 | mΩ | VGS =4.5V, ID =3A | 2 | |
| Drain-source on-resistance | RDS(on) | 8.8 | 10.5 | mΩ | VGS =4.0V, ID =3A | 2 | |
| Drain-source on-resistance | RDS(on) | 9 | 11 | mΩ | VGS =3.8V, ID =3A | 2 | |
| Drain-source on-resistance | RDS(on) | 9.7 | 11.5 | mΩ | VGS =3.1V, ID =3A | 2 | |
| Drain-source on-resistance | RDS(on) | 11 | 15 | mΩ | VGS =2.5V, ID =3A | 2 | |
| Diode forward voltage | VSD | 1.2 | V | IS=3A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 10 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | Ta=25℃ | 1 | ||
| Power Dissipation | PD | 2 | W | Ta=25℃ | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | ℃ | Ta=25℃ | 1 | |
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | ℃/W | Ta=25℃ | 1 | ||
| Input Capacitance | Ciss | 1258 | pF | VDS =10V,VGS =0V,f =0.1MHz | 2 | ||
| Output Capacitance | Coss | 193 | pF | VDS =10V,VGS =0V,f =0.1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 51 | pF | VDS =10V,VGS =0V,f =0.1MHz | 2 | ||
| Total gate charge | Qg | 15 | nC | VDS =10V,VGS =4.5V,ID =7A | 2 | ||
| Gate-source charge | Qgs | 3.4 | nC | VDS =10V,VGS =4.5V,ID =7A | 2 | ||
| Gate-drain charge | Qgd | 5.7 | nC | VDS =10V,VGS =4.5V,ID =7A | 2 | ||
| Turn-on delay time | td(on) | 30 | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 | ||
| Turn-on rise time | tr | 54 | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 | ||
| Turn-off delay time | td(off) | 77 | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 | ||
| Turn-off fall time | tf | 58 | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
CJS9004A - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjs9004a-etched.step/cjs9004a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjs9004a.step/cjs9004a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
d9137eff3eb9f7d1, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJS9004A
**Changjing** · MOSFETs · TSSOP-8
CJS9004A from Changjing, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (common-drain configuration), rated VDS 20 V and continuous ID 10 A. |
| 2 | S1 | passive | Source of MOSFET 1, connected in parallel with pin 3; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 3 | S1 | passive | Source of MOSFET 1, connected in parallel with pin 2; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 4 | G1 | input | Gate of MOSFET 1 (ESD protected), maximum gate-source voltage ±12 V, threshold 0.4 to 1.0 V. |
| 5 | G2 | input | Gate of MOSFET 2 (ESD protected), maximum gate-source voltage ±12 V, threshold 0.4 to 1.0 V. |
| 6 | S2 | passive | Source of MOSFET 2, connected in parallel with pin 7; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 7 | S2 | passive | Source of MOSFET 2, connected in parallel with pin 6; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V. |
| 8 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (common-drain configuration), rated VDS 20 V and continuous ID 10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TSSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =16V,VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -1 | | 1 | µA | VGS =±4.5V, VDS = 0V | 2 |
| Gate-body leakage current | IGSS | -10 | | 10 | µA | VGS =±8V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.4 | | 1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) | | 8.5 | 10 | mΩ | VGS =4.5V, ID =3A | 2 |
| Drain-source on-resistance | RDS(on) | | 8.8 | 10.5 | mΩ | VGS =4.0V, ID =3A | 2 |
| Drain-source on-resistance | RDS(on) | | 9 | 11 | mΩ | VGS =3.8V, ID =3A | 2 |
| Drain-source on-resistance | RDS(on) | | 9.7 | 11.5 | mΩ | VGS =3.1V, ID =3A | 2 |
| Drain-source on-resistance | RDS(on) | | 11 | 15 | mΩ | VGS =2.5V, ID =3A | 2 |
| Diode forward voltage | VSD | | | 1.2 | V | IS=3A, VGS = 0V | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | Ta=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | Ta=25℃ | 1 |
| Continuous Drain Current | ID | | | 10 | A | Ta=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 50 | A | Ta=25℃ | 1 |
| Power Dissipation | PD | | | 2 | W | Ta=25℃ | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | ℃ | Ta=25℃ | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 62.5 | ℃/W | Ta=25℃ | 1 |
| Input Capacitance | Ciss | | 1258 | | pF | VDS =10V,VGS =0V,f =0.1MHz | 2 |
| Output Capacitance | Coss | | 193 | | pF | VDS =10V,VGS =0V,f =0.1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 51 | | pF | VDS =10V,VGS =0V,f =0.1MHz | 2 |
| Total gate charge | Qg | | 15 | | nC | VDS =10V,VGS =4.5V,ID =7A | 2 |
| Gate-source charge | Qgs | | 3.4 | | nC | VDS =10V,VGS =4.5V,ID =7A | 2 |
| Gate-drain charge | Qgd | | 5.7 | | nC | VDS =10V,VGS =4.5V,ID =7A | 2 |
| Turn-on delay time | td(on) | | 30 | | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 |
| Turn-on rise time | tr | | 54 | | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 |
| Turn-off delay time | td(off) | | 77 | | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 |
| Turn-off fall time | tf | | 58 | | ns | VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 2 |
## CAD (KiCad official)
- Symbol: `CJS9004A`
- Footprint: `Package_SO:TSSOP-8_3x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjs9004a-etched.step` / `cjs9004a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjs9004a.step` / `cjs9004a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/cjs9004a-datasheet.pdf) (5 pp, sha256 `d9137eff3eb9f7d1`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjs9004a-datasheet.pdf)