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Contents

README

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CJS9004A

Changjing · MOSFETs · TSSOP-8

CJS9004A from Changjing, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2 (common-drain configuration), rated VDS 20 V and continuous ID 10 A.
2 S1 passive Source of MOSFET 1, connected in parallel with pin 3; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V.
3 S1 passive Source of MOSFET 1, connected in parallel with pin 2; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V.
4 G1 input Gate of MOSFET 1 (ESD protected), maximum gate-source voltage ±12 V, threshold 0.4 to 1.0 V.
5 G2 input Gate of MOSFET 2 (ESD protected), maximum gate-source voltage ±12 V, threshold 0.4 to 1.0 V.
6 S2 passive Source of MOSFET 2, connected in parallel with pin 7; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V.
7 S2 passive Source of MOSFET 2, connected in parallel with pin 6; VDS 20 V, ID 10 A, RDS(on) typ 8.5 mΩ at VGS 4.5 V.
8 D1/D2 passive Common drain of MOSFET 1 and MOSFET 2 (common-drain configuration), rated VDS 20 V and continuous ID 10 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =16V,VGS = 0V 2
Gate-body leakage current IGSS -1 1 µA VGS =±4.5V, VDS = 0V 2
Gate-body leakage current IGSS -10 10 µA VGS =±8V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.4 1 V VDS =VGS, ID =250µA 2
Drain-source on-resistance RDS(on) 8.5 10 mΩ VGS =4.5V, ID =3A 2
Drain-source on-resistance RDS(on) 8.8 10.5 mΩ VGS =4.0V, ID =3A 2
Drain-source on-resistance RDS(on) 9 11 mΩ VGS =3.8V, ID =3A 2
Drain-source on-resistance RDS(on) 9.7 11.5 mΩ VGS =3.1V, ID =3A 2
Drain-source on-resistance RDS(on) 11 15 mΩ VGS =2.5V, ID =3A 2
Diode forward voltage VSD 1.2 V IS=3A, VGS = 0V 2
Drain-Source Voltage VDS 20 V Ta=25℃ 1
Gate-Source Voltage VGS -12 12 V Ta=25℃ 1
Continuous Drain Current ID 10 A Ta=25℃ 1
Pulsed Drain Current IDM 50 A Ta=25℃ 1
Power Dissipation PD 2 W Ta=25℃ 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 ℃ Ta=25℃ 1
Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Ta=25℃ 1
Input Capacitance Ciss 1258 pF VDS =10V,VGS =0V,f =0.1MHz 2
Output Capacitance Coss 193 pF VDS =10V,VGS =0V,f =0.1MHz 2
Reverse Transfer Capacitance Crss 51 pF VDS =10V,VGS =0V,f =0.1MHz 2
Total gate charge Qg 15 nC VDS =10V,VGS =4.5V,ID =7A 2
Gate-source charge Qgs 3.4 nC VDS =10V,VGS =4.5V,ID =7A 2
Gate-drain charge Qgd 5.7 nC VDS =10V,VGS =4.5V,ID =7A 2
Turn-on delay time td(on) 30 ns VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 2
Turn-on rise time tr 54 ns VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 2
Turn-off delay time td(off) 77 ns VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 2
Turn-off fall time tf 58 ns VGS=4.5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: CJS9004A
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: cjs9004a-etched.step / cjs9004a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjs9004a.step / cjs9004a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 d9137eff3eb9f7d1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF