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CJQ4953
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Changjiang Electronics Tech (CJ) Pre-ordered transistors, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJQ4953
Changjiang Electronics Tech (CJ) · Pre-ordered transistors · SOP-8
CJQ4953 from Changjiang Electronics Tech (CJ), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET, with VDS rated -30 V and VGS rated ±20 V for the device. |
| 2 | G1 | input | Gate terminal of the first MOSFET, with gate-source voltage rated ±20 V (VGS). |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET, with VDS rated -30 V and VGS rated ±20 V for the device. |
| 4 | G2 | input | Gate terminal of the second MOSFET, with gate-source voltage rated ±20 V (VGS). |
| 5 | D2 | passive | Drain terminal of the second MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
| 6 | D2 | passive | Drain terminal of the second MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
| 7 | D1 | passive | Drain terminal of the first MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
| 8 | D1 | passive | Drain terminal of the first MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | t≤10s | 1 | ||
| Power Dissipation | PD | 1.25 | W | t≤10s | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 100 | ℃/W | t≤10s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS =0V, ID =-250µA | 2 | ||
| Gate-threshold voltage | VGS(th) | -1 | -1.5 | V | VDS =VGS, ID =-250µA | 2 | |
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS =-30V, VGS =0V | 2 | ||
| Drain-source on-resistance | RDS(on) | 50 | 60 | mΩ | VGS =-10V, ID =-4.9A | 2 | |
| Drain-source on-resistance | RDS(on) | 66 | 90 | mΩ | VGS =-4.5V, ID =-3.7A | 2 | |
| Forward transconductance | gfs | 6 | S | VDS =-10V, ID =-4.9A | 2 | ||
| Diode forward voltage | VSD | -1.2 | V | IS=-1.7A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
CJQ4953 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq4953-etched.step/cjq4953-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq4953.step/cjq4953.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256
127ee3c86f182113, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJQ4953
**Changjiang Electronics Tech (CJ)** · Pre-ordered transistors · SOP-8
CJQ4953 from Changjiang Electronics Tech (CJ), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET, with VDS rated -30 V and VGS rated ±20 V for the device. |
| 2 | G1 | input | Gate terminal of the first MOSFET, with gate-source voltage rated ±20 V (VGS). |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET, with VDS rated -30 V and VGS rated ±20 V for the device. |
| 4 | G2 | input | Gate terminal of the second MOSFET, with gate-source voltage rated ±20 V (VGS). |
| 5 | D2 | passive | Drain terminal of the second MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
| 6 | D2 | passive | Drain terminal of the second MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
| 7 | D1 | passive | Drain terminal of the first MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
| 8 | D1 | passive | Drain terminal of the first MOSFET, with continuous drain current ID rated -5 A (t≤10s). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -5 | A | t≤10s | 1 |
| Power Dissipation | PD | | | 1.25 | W | t≤10s | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | t≤10s | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -30 | | | V | VGS =0V, ID =-250µA | 2 |
| Gate-threshold voltage | VGS(th) | -1 | | -1.5 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS =-30V, VGS =0V | 2 |
| Drain-source on-resistance | RDS(on) | | 50 | 60 | mΩ | VGS =-10V, ID =-4.9A | 2 |
| Drain-source on-resistance | RDS(on) | | 66 | 90 | mΩ | VGS =-4.5V, ID =-3.7A | 2 |
| Forward transconductance | gfs | 6 | | | S | VDS =-10V, ID =-4.9A | 2 |
| Diode forward voltage | VSD | | | -1.2 | V | IS=-1.7A,VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `CJQ4953`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjq4953-etched.step` / `cjq4953-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjq4953.step` / `cjq4953.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/cjq4953-datasheet.pdf) (5 pp, sha256 `127ee3c86f182113`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjq4953-datasheet.pdf)