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CJQ4953

Public Made by Adom

by adom

Changjiang Electronics Tech (CJ) Pre-ordered transistors, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJQ4953

Changjiang Electronics Tech (CJ) · Pre-ordered transistors · SOP-8

CJQ4953 from Changjiang Electronics Tech (CJ), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first P-channel MOSFET, with VDS rated -30 V and VGS rated ±20 V for the device.
2 G1 input Gate terminal of the first MOSFET, with gate-source voltage rated ±20 V (VGS).
3 S2 passive Source terminal of the second P-channel MOSFET, with VDS rated -30 V and VGS rated ±20 V for the device.
4 G2 input Gate terminal of the second MOSFET, with gate-source voltage rated ±20 V (VGS).
5 D2 passive Drain terminal of the second MOSFET, with continuous drain current ID rated -5 A (t≤10s).
6 D2 passive Drain terminal of the second MOSFET, with continuous drain current ID rated -5 A (t≤10s).
7 D1 passive Drain terminal of the first MOSFET, with continuous drain current ID rated -5 A (t≤10s).
8 D1 passive Drain terminal of the first MOSFET, with continuous drain current ID rated -5 A (t≤10s).

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5 A t≤10s 1
Power Dissipation PD 1.25 W t≤10s 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W t≤10s 1
Drain-source breakdown voltage V(BR)DSS -30 V VGS =0V, ID =-250µA 2
Gate-threshold voltage VGS(th) -1 -1.5 V VDS =VGS, ID =-250µA 2
Gate-body leakage IGSS -100 100 nA VDS =0V, VGS =±20V 2
Zero gate voltage drain current IDSS -1 µA VDS =-30V, VGS =0V 2
Drain-source on-resistance RDS(on) 50 60 mΩ VGS =-10V, ID =-4.9A 2
Drain-source on-resistance RDS(on) 66 90 mΩ VGS =-4.5V, ID =-3.7A 2
Forward transconductance gfs 6 S VDS =-10V, ID =-4.9A 2
Diode forward voltage VSD -1.2 V IS=-1.7A,VGS=0V 2

CAD (KiCad official)

  • Symbol: CJQ4953
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cjq4953-etched.step / cjq4953-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjq4953.step / cjq4953.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256 127ee3c86f182113, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF