component
CJQ4828
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJQ4828
Changjing · MOSFETs · SOP-8
CJQ4828 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel), per the equivalent circuit; VDS rating 60V. |
| 2 | G2 | input | Gate of MOSFET 2, with VGS limited to ±20V and threshold of 1V min to 3V max at 250µA. |
| 3 | S1 | passive | Source of MOSFET 1 (N-channel), per the equivalent circuit; VDS rating 60V. |
| 4 | G1 | input | Gate of MOSFET 1, with VGS limited to ±20V and threshold of 1V min to 3V max at 250µA. |
| 5 | D1 | passive | Drain of MOSFET 1, tied internally with pin 6; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
| 6 | D1 | passive | Drain of MOSFET 1, tied internally with pin 5; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
| 7 | D2 | passive | Drain of MOSFET 2, tied internally with pin 8; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
| 8 | D2 | passive | Drain of MOSFET 2, tied internally with pin 7; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | t ≤10s (note 1) | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | note 2 | 1 | ||
| Power Dissipation | PD | 1.25 | W | 1 | |||
| Avalanche Current | IAR,IAS | 19 | A | note 2 | 1 | ||
| Repetitive Avalanche Energy | EAR,EAS | 18 | mJ | 0.1mH (note 2) | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 100 | ℃/W | t ≤10s (note 1) | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =60V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.1 | 3 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) | 40 | 56 | mΩ | VGS =10V, ID =4.5A | 2 | |
| Drain-source on-resistance | RDS(on) | 55 | 77 | mΩ | VGS =4.5V, ID =3A | 2 | |
| Forward transconductance | gFS | 6 | S | VDS =5V, ID =4.5A | 2 | ||
| Diode forward voltage | VSD | 1 | V | IS=1A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
CJQ4828 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq4828-etched.step/cjq4828-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq4828.step/cjq4828.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
a75ae0789de254ec, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJQ4828
**Changjing** · MOSFETs · SOP-8
CJQ4828 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel), per the equivalent circuit; VDS rating 60V. |
| 2 | G2 | input | Gate of MOSFET 2, with VGS limited to ±20V and threshold of 1V min to 3V max at 250µA. |
| 3 | S1 | passive | Source of MOSFET 1 (N-channel), per the equivalent circuit; VDS rating 60V. |
| 4 | G1 | input | Gate of MOSFET 1, with VGS limited to ±20V and threshold of 1V min to 3V max at 250µA. |
| 5 | D1 | passive | Drain of MOSFET 1, tied internally with pin 6; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
| 6 | D1 | passive | Drain of MOSFET 1, tied internally with pin 5; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
| 7 | D2 | passive | Drain of MOSFET 2, tied internally with pin 8; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
| 8 | D2 | passive | Drain of MOSFET 2, tied internally with pin 7; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 4.5 | A | t ≤10s (note 1) | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | note 2 | 1 |
| Power Dissipation | PD | | | 1.25 | W | | 1 |
| Avalanche Current | IAR,IAS | | | 19 | A | note 2 | 1 |
| Repetitive Avalanche Energy | EAR,EAS | | | 18 | mJ | 0.1mH (note 2) | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 100 | ℃/W | t ≤10s (note 1) | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =60V,VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VGS =±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 1 | 2.1 | 3 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) | | 40 | 56 | mΩ | VGS =10V, ID =4.5A | 2 |
| Drain-source on-resistance | RDS(on) | | 55 | 77 | mΩ | VGS =4.5V, ID =3A | 2 |
| Forward transconductance | gFS | 6 | | | S | VDS =5V, ID =4.5A | 2 |
| Diode forward voltage | VSD | | | 1 | V | IS=1A, VGS = 0V | 2 |
## CAD (KiCad official)
- Symbol: `CJQ4828`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjq4828-etched.step` / `cjq4828-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjq4828.step` / `cjq4828.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879897641299968) (5 pp, sha256 `a75ae0789de254ec`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjq4828-datasheet.pdf)