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CJQ4828

Public Made by Adom

by adom

Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CJQ4828

Changjing · MOSFETs · SOP-8

CJQ4828 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel), per the equivalent circuit; VDS rating 60V.
2 G2 input Gate of MOSFET 2, with VGS limited to ±20V and threshold of 1V min to 3V max at 250µA.
3 S1 passive Source of MOSFET 1 (N-channel), per the equivalent circuit; VDS rating 60V.
4 G1 input Gate of MOSFET 1, with VGS limited to ±20V and threshold of 1V min to 3V max at 250µA.
5 D1 passive Drain of MOSFET 1, tied internally with pin 6; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A.
6 D1 passive Drain of MOSFET 1, tied internally with pin 5; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A.
7 D2 passive Drain of MOSFET 2, tied internally with pin 8; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A.
8 D2 passive Drain of MOSFET 2, tied internally with pin 7; VDS 60V max, continuous ID 4.5A, pulsed IDM 20A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 4.5 A t ≤10s (note 1) 1
Pulsed Drain Current IDM 20 A note 2 1
Power Dissipation PD 1.25 W 1
Avalanche Current IAR,IAS 19 A note 2 1
Repetitive Avalanche Energy EAR,EAS 18 mJ 0.1mH (note 2) 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W t ≤10s (note 1) 1
Drain-source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =60V,VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.1 3 V VDS =VGS, ID =250µA 2
Drain-source on-resistance RDS(on) 40 56 mΩ VGS =10V, ID =4.5A 2
Drain-source on-resistance RDS(on) 55 77 mΩ VGS =4.5V, ID =3A 2
Forward transconductance gFS 6 S VDS =5V, ID =4.5A 2
Diode forward voltage VSD 1 V IS=1A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: CJQ4828
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cjq4828-etched.step / cjq4828-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjq4828.step / cjq4828.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 a75ae0789de254ec, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF