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CJQ4435A

Changjing · MOSFETs · SOP-8

CJQ4435A from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and gate-source voltage of ±20 V.
2 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and gate-source voltage of ±20 V.
3 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V and gate-source voltage of ±20 V.
4 G input Gate terminal; the datasheet gives a gate-source voltage limit of ±20 V.
5 D passive Drain terminal; continuous drain current is rated -9.9 A and pulsed drain current -40 A.
6 D passive Drain terminal; continuous drain current is rated -9.9 A and pulsed drain current -40 A.
7 D passive Drain terminal; continuous drain current is rated -9.9 A and pulsed drain current -40 A.
8 D passive Drain terminal; continuous drain current is rated -9.9 A and pulsed drain current -40 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -9.9 A 1
Pulsed Drain Current IDM -40 A 1
Single Pulsed Avalanche Energy EAS 76 mJ 1
Power Dissipation PD 2.5 W 1
Operating Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Maximum Junction-to-Ambient thermal resistance RθJA 33 50 ℃/W t ≤ 10s 1
Maximum Junction-to-Ambient thermal resistance RθJA 63 95 ℃/W Steady State 1
Drain-source breakdown voltage V(BR) DSS -30 V VGS = 0V, ID =-250uA 2
Zero gate voltage drain current IDSS -1 µA VDS =-30V, VGS =0V; TJ =25℃ 2
Zero gate voltage drain current IDSS -100 µA VDS =-30V, VGS =0V; TJ =125℃ 2
Gate-body leakage current IGSS -100 100 nA VDS =0V, VGS =±20V 2
Gate-threshold voltage VGS(th) -1.1 -1.6 -2.2 V VDS =VGS, ID =-250µA 2
Static drain-source on-state resistance RDS(on) 17 25 mΩ VGS =-4.5V, ID =-6.9A 2
Continuous drain-source diode forward current IS -9.9 A 2
Pulsed drain-source diode forward current ISM -40 A 2

CAD (KiCad official)

  • Symbol: CJQ4435A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cjq4435a-etched.step / cjq4435a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjq4435a.step / cjq4435a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 7998a316a71344f9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF