component
CJQ20N03
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CJQ20N03
Changjing · MOSFETs · SOP-8
CJQ20N03 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 6 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 7 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 8 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | 1 | |||
| Pulsed Drain Current | IDM | 75 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 89 | ℃/W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ℃ | 1/8'' from case for 10s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =24V, VGS =0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VDS =VGS, ID =250µA | 2 |
| Continuous drain-source diode forward current | IS | 15 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 64 | A | 2 | |||
| Static drain-source on-state resistance | RDS(on) | 3.1 | mΩ | VGS =10V, ID =10A | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 4.5 | mΩ | VGS =4.5V, ID =10A | 2 | ||
| Forward transconductance | gFS | 24 | S | VDS =10V, ID =10A | 2 | ||
| Input capacitance | Ciss | 2412 | pF | VDS =15V,VGS =0V, f =1MHz | 2 | ||
| Output capacitance | Coss | 420 | pF | VDS =15V,VGS =0V, f =1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 396 | pF | VDS =15V,VGS =0V, f =1MHz | 2 | ||
| Total gate charge | Qg | 54 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Gate-source charge | Qgs | 4.1 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Gate-drain charge | Qgd | 19 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Turn-on delay time | td(on) | 19 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Turn-on rise time | tr | 44 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Turn-off delay time | td(off) | 58 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Turn-off fall time | tf | 16.7 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Drain-source diode forward voltage | VSD | 1.2 | V | VGS =0V, IS=10A | 2 |
CAD (KiCad official)
- Symbol:
CJQ20N03 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq20n03-etched.step/cjq20n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq20n03.step/cjq20n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
f5573f9b6a09d09f, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CJQ20N03
**Changjing** · MOSFETs · SOP-8
CJQ20N03 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 6 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 7 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 8 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 20 | A | | 1 |
| Pulsed Drain Current | IDM | | | 75 | A | | 1 |
| Power Dissipation | PD | | | 1.4 | W | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 89 | ℃/W | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | ℃ | 1/8'' from case for 10s | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =24V, VGS =0V | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate-threshold voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VDS =VGS, ID =250µA | 2 |
| Continuous drain-source diode forward current | IS | | | 15 | A | | 2 |
| Pulsed drain-source diode forward current | ISM | | | 64 | A | | 2 |
| Static drain-source on-state resistance | RDS(on) | | 3.1 | | mΩ | VGS =10V, ID =10A | 2 |
| Static drain-source on-state resistance | RDS(on) | | 4.5 | | mΩ | VGS =4.5V, ID =10A | 2 |
| Forward transconductance | gFS | | 24 | | S | VDS =10V, ID =10A | 2 |
| Input capacitance | Ciss | | 2412 | | pF | VDS =15V,VGS =0V, f =1MHz | 2 |
| Output capacitance | Coss | | 420 | | pF | VDS =15V,VGS =0V, f =1MHz | 2 |
| Reverse transfer capacitance | Crss | | 396 | | pF | VDS =15V,VGS =0V, f =1MHz | 2 |
| Total gate charge | Qg | | 54 | | nC | VGS=10V, VDS=25V, ID=10A | 2 |
| Gate-source charge | Qgs | | 4.1 | | nC | VGS=10V, VDS=25V, ID=10A | 2 |
| Gate-drain charge | Qgd | | 19 | | nC | VGS=10V, VDS=25V, ID=10A | 2 |
| Turn-on delay time | td(on) | | 19 | | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 |
| Turn-on rise time | tr | | 44 | | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 |
| Turn-off delay time | td(off) | | 58 | | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 |
| Turn-off fall time | tf | | 16.7 | | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 |
| Drain-source diode forward voltage | VSD | | 1.2 | | V | VGS =0V, IS=10A | 2 |
## CAD (KiCad official)
- Symbol: `CJQ20N03`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `cjq20n03-etched.step` / `cjq20n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cjq20n03.step` / `cjq20n03.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590912299085340672) (5 pp, sha256 `f5573f9b6a09d09f`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cjq20n03-datasheet.pdf)