component
CJQ20N03
Public Made by Adomby adom
Changjing MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| cjq20n03-etched.glb | 23d ago |
| cjq20n03-etched.step | 23d ago |
| cjq20n03-hero.glb | 23d ago |
| cjq20n03-hero.overlay.json | 23d ago |
| cjq20n03.glb | 23d ago |
| cjq20n03.kicad_mod | 23d ago |
| cjq20n03.kicad_sym | 23d ago |
| cjq20n03.lbr | 23d ago |
| cjq20n03.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
CJQ20N03
Changjing · MOSFETs · SOP-8
CJQ20N03 from Changjing, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; pins 1 to 3 are all marked as source in the package marking drawing, with continuous drain current rated 20 A. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 6 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 7 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
| 8 | D | passive | Drain terminal of the MOSFET; pins 5 to 8 are all marked as drain in the package marking drawing, with pulsed drain current rated 75 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | 1 | |||
| Pulsed Drain Current | IDM | 75 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 89 | ℃/W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ℃ | 1/8'' from case for 10s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =24V, VGS =0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate-threshold voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VDS =VGS, ID =250µA | 2 |
| Continuous drain-source diode forward current | IS | 15 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 64 | A | 2 | |||
| Static drain-source on-state resistance | RDS(on) | 3.1 | mΩ | VGS =10V, ID =10A | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 4.5 | mΩ | VGS =4.5V, ID =10A | 2 | ||
| Forward transconductance | gFS | 24 | S | VDS =10V, ID =10A | 2 | ||
| Input capacitance | Ciss | 2412 | pF | VDS =15V,VGS =0V, f =1MHz | 2 | ||
| Output capacitance | Coss | 420 | pF | VDS =15V,VGS =0V, f =1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 396 | pF | VDS =15V,VGS =0V, f =1MHz | 2 | ||
| Total gate charge | Qg | 54 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Gate-source charge | Qgs | 4.1 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Gate-drain charge | Qgd | 19 | nC | VGS=10V, VDS=25V, ID=10A | 2 | ||
| Turn-on delay time | td(on) | 19 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Turn-on rise time | tr | 44 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Turn-off delay time | td(off) | 58 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Turn-off fall time | tf | 16.7 | ns | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 2 | ||
| Drain-source diode forward voltage | VSD | 1.2 | V | VGS =0V, IS=10A | 2 |
CAD (KiCad official)
- Symbol:
CJQ20N03 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cjq20n03-etched.step/cjq20n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cjq20n03.step/cjq20n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
f5573f9b6a09d09f, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).