main
Ray Set visibility: public 64cb1bf 16h ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "cj3439kdw",
  "title": "CJ3439KDW",
  "brief": "Changjiang Electronics Tech (CJ) MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors",
    "cj3439kdw",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "CJ3439KDW",
    "manufacturer": "Changjiang Electronics Tech (CJ)",
    "package": "SOT-363",
    "pin_count": 6,
    "category": "Transistors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/1300ae41d9efc3741e3098a9a42c762d.pdf",
    "parts": {
      "symbol": "cj3439kdw.kicad_sym",
      "footprint": "cj3439kdw.kicad_mod",
      "model_3d": "cj3439kdw-hero.glb",
      "model_3d_plain": "cj3439kdw-etched.glb",
      "model_3d_step": "cj3439kdw-etched.step",
      "model_3d_step_plain": "cj3439kdw.step",
      "lbr": "cj3439kdw.lbr"
    },
    "distributor_links": {
      "lcsc": "C99824"
    },
    "distributor_check": {
      "checked_at": "2026-10-21T03:21:27Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (CJ3134K section, VDS 20 V, ID 0.75 A)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "ESD-protected gate of the N-channel MOSFET, VGS rated ±12 V, threshold 0.35 V min to 1.1 V max."
      },
      {
        "number": "3",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET (CJ3139K section, VDS -20 V, ID -0.66 A)."
      },
      {
        "number": "4",
        "name": "S2",
        "type": "passive",
        "description": "Source of the P-channel MOSFET (VDS -20 V, ID -0.66 A)."
      },
      {
        "number": "5",
        "name": "G2",
        "type": "input",
        "description": "ESD-protected gate of the P-channel MOSFET, VGS rated ±12 V, threshold -0.35 V to -1.1 V."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET (VDS 20 V, ID 0.75 A, pulsed 1.8 A)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin assignment read from the equivalent circuit and top-view marking drawing on page 1; the pin-1 lo",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 6,
        "cost_usd": 0.1298,
        "at": "2026-10-21T03:14:57"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/1300ae41d9efc3741e3098a9a42c762d.pdf",
        "pages": 6,
        "sha256": "41cb3b3374616678",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "units": "mm",
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        "seat": "z = 0",
        "extents_mm": [
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        "footprint_binding": "identity",
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        "checked": "2026-10-21",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "Changjiang Electronics Tech (CJ)",
      "Package": "SOT-363",
      "Category": "Transistors",
      "Pins": "6"
    },
    "characteristics": {
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          "max": 20,
          "conditions": "",
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          "kind": "absolute_maximum",
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        },
        {
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          "unit": "A",
          "min": null,
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        {
          "name": "N-MOSFET Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
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          "conditions": "tp=10us",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "P-MOSFET Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
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        },
        {
          "name": "P-MOSFET Typical Gate-Source Voltage",
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        {
          "name": "P-MOSFET Continuous Drain Current",
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        },
        {
          "name": "P-MOSFET Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -1.2,
          "typ": null,
          "max": null,
          "conditions": "tp=10us",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance from Junction to Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 833,
          "conditions": "note 1",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Junction Temperature",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": null,
          "typ": null,
          "max": 150,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Storage Temperature",
          "symbol": "TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Lead Temperature for Soldering Purposes",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "1/8'' from case for 10 s",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "N-ch Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 20,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID =250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS =20V,VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "uA",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "VGS =±10V, VDS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 0.35,
          "typ": null,
          "max": 1.1,
          "conditions": "VDS =VGS, ID =250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 380,
          "conditions": "VGS =4.5V, ID =0.65A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 450,
          "conditions": "VGS =2.5V, ID =0.55A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 800,
          "conditions": "VGS =1.8V, ID =0.45A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 79,
          "max": 120,
          "conditions": "VDS =16V,VGS =0V,f =1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Output Capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 13,
          "max": 20,
          "conditions": "VDS =16V,VGS =0V,f =1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Reverse Transfer Capacitance",
          "symbol": "Crss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 9,
          "max": 15,
          "conditions": "VDS =16V,VGS =0V,f =1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "N-ch Diode forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "IS=0.15A, VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID =-250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -1,
          "typ": null,
          "max": null,
          "conditions": "VDS =-20V,VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "uA",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "VGS =±10V, VDS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": -1.1,
          "typ": null,
          "max": -0.35,
          "conditions": "VDS =VGS, ID =-250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 520,
          "conditions": "VGS =-4.5V, ID =-1A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 700,
          "conditions": "VGS =-2.5V, ID =-0.8A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 113,
          "max": 170,
          "conditions": "VDS =-16V,VGS =0V,f =1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Output Capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 15,
          "max": 25,
          "conditions": "VDS =-16V,VGS =0V,f =1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Reverse Transfer Capacitance",
          "symbol": "Crss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 9,
          "max": 15,
          "conditions": "VDS =-16V,VGS =0V,f =1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "P-ch Diode forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": -1.2,
          "typ": null,
          "max": null,
          "conditions": "IS=-0.5A, VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "cj3439kdw"
  ],
  "discovery_pitch": "CJ3439KDW (Changjiang Electronics Tech (CJ)) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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}