component
CJ3439KDW
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Changjiang Electronics Tech (CJ) MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCJ3439KDW
Changjiang Electronics Tech (CJ) · MOSFETs · SOT-363
CJ3439KDW from Changjiang Electronics Tech (CJ), in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (CJ3134K section, VDS 20 V, ID 0.75 A). |
| 2 | G1 | input | ESD-protected gate of the N-channel MOSFET, VGS rated ±12 V, threshold 0.35 V min to 1.1 V max. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (CJ3139K section, VDS -20 V, ID -0.66 A). |
| 4 | S2 | passive | Source of the P-channel MOSFET (VDS -20 V, ID -0.66 A). |
| 5 | G2 | input | ESD-protected gate of the P-channel MOSFET, VGS rated ±12 V, threshold -0.35 V to -1.1 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20 V, ID 0.75 A, pulsed 1.8 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-363 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-MOSFET Drain-Source Voltage | VDS | 20 | V | 1 | |||
| N-MOSFET Typical Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| N-MOSFET Continuous Drain Current | ID | 0.75 | A | note 1 | 1 | ||
| N-MOSFET Pulsed Drain Current | IDM | 1.8 | A | tp=10us | 1 | ||
| P-MOSFET Drain-Source Voltage | VDS | -20 | V | 1 | |||
| P-MOSFET Typical Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| P-MOSFET Continuous Drain Current | ID | -0.66 | A | note 1 | 1 | ||
| P-MOSFET Pulsed Drain Current | IDM | -1.2 | A | tp=10us | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 833 | ℃/W | note 1 | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ℃ | 1/8'' from case for 10 s | 1 | ||
| N-ch Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| N-ch Zero gate voltage drain current | IDSS | 1 | µA | VDS =20V,VGS = 0V | 2 | ||
| N-ch Gate-body leakage current | IGSS | -20 | 20 | uA | VGS =±10V, VDS = 0V | 2 | |
| N-ch Gate threshold voltage | VGS(th) | 0.35 | 1.1 | V | VDS =VGS, ID =250µA | 2 | |
| N-ch Drain-source on-resistance | RDS(on) | 380 | mΩ | VGS =4.5V, ID =0.65A | 2 | ||
| N-ch Drain-source on-resistance | RDS(on) | 450 | mΩ | VGS =2.5V, ID =0.55A | 2 | ||
| N-ch Drain-source on-resistance | RDS(on) | 800 | mΩ | VGS =1.8V, ID =0.45A | 2 | ||
| N-ch Input Capacitance | Ciss | 79 | 120 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | |
| N-ch Output Capacitance | Coss | 13 | 20 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | |
| N-ch Reverse Transfer Capacitance | Crss | 9 | 15 | pF | VDS =16V,VGS =0V,f =1MHz | 2 | |
| N-ch Diode forward voltage | VSD | 1.2 | V | IS=0.15A, VGS = 0V | 2 | ||
| P-ch Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS = 0V, ID =-250µA | 2 | ||
| P-ch Zero gate voltage drain current | IDSS | -1 | µA | VDS =-20V,VGS = 0V | 2 | ||
| P-ch Gate-body leakage current | IGSS | -20 | 20 | uA | VGS =±10V, VDS = 0V | 2 | |
| P-ch Gate threshold voltage | VGS(th) | -1.1 | -0.35 | V | VDS =VGS, ID =-250µA | 2 | |
| P-ch Drain-source on-resistance | RDS(on) | 520 | mΩ | VGS =-4.5V, ID =-1A | 2 | ||
| P-ch Drain-source on-resistance | RDS(on) | 700 | mΩ | VGS =-2.5V, ID =-0.8A | 2 | ||
| P-ch Input Capacitance | Ciss | 113 | 170 | pF | VDS =-16V,VGS =0V,f =1MHz | 2 | |
| P-ch Output Capacitance | Coss | 15 | 25 | pF | VDS =-16V,VGS =0V,f =1MHz | 2 | |
| P-ch Reverse Transfer Capacitance | Crss | 9 | 15 | pF | VDS =-16V,VGS =0V,f =1MHz | 2 | |
| P-ch Diode forward voltage | VSD | -1.2 | V | IS=-0.5A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
CJ3439KDW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
cj3439kdw-etched.step/cj3439kdw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj3439kdw.step/cj3439kdw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (6 pp, sha256
41cb3b3374616678, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).